SEMICONDUCTOR MBR20U150CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C ・Average Output Rectified Current F E : IO=20A. G B ・Repetitive Peak Reverse Voltage Q : VRRM=150V. I ・Fast Reverse Recovery Time : trr=35ns. K P M L J D N H N MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Repetitive Peak Reverse Voltage Average Output Rectified Current (Note) Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VRRM 150 V IO 20 A IFSM 180 A Tj -40～150 ℃ Tstg -55～150 ℃ 1. ANODE 2. CATHODE 3. ANODE DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q TO-220AB Note : average forward current of centertap full wave connection. 2 1 3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Peak Forward Voltage (Note) Repetitive Peak SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VFM IFM=10A - - 0.90 V IRRM VRRM=Rated - - 50 ㎂ IF=1.0A, di/dt=-30A/㎲ - - 35 ns Juction to Case - - 1.5 ℃/W Reverse Current (Note) Reverse Recovery Time (Note) trr Thermal Resistance (Note) Rth(j-c) Note : A value of one cell 2009. 3. 2 Revision No : 0 1/1