SEMICONDUCTOR MBRF10U100CTA TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current DIM B E G : IO=10A. ・Repetitive Peak Reverse Voltage : VRRM=100V. K ・Low Forward Voltage. ・Low Reverse Current. L M J R D MAXIMUM RATING (Ta=25℃) N CHARACTERISTIC RATING UNIT VRRM 100 V Q Repetitive Peak Reverse Voltage SYMBOL Average Output Rectified Current (Tc=110℃) (Note) Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range IO 10 A IFSM 100 A Tj -40~150 ℃ Tstg -55~150 ℃ 1 N 2 H 1. ANODE 3 2. CATHODE A B C D E F G H J K L M N O Q R MILLIMETERS _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + 3. ANODE TO-220IS (1) Note : average forward current of centertap full wave connection. 2 1 3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Peak Forward Voltage (Note) Repetitive Peak SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VFM IFM=5A - - 0.85 V IRRM VRRM=Rated - 2 50 ㎂ IF=1.0A, di/dt=-30A/㎲ - - 35 ㎱ Juction to Case - - 4.5 ℃/W Reverse Current (Note) Reverse Recovery Time (Note) trr Thermal Resistance (Note) Rth(j-c) Note : A value of one cell 2010. 9. 28 Revision No :0 1/2 MBRF10U100CTA IF - VF IR - VR 10 Tj =150 C Tj =25 C 1 0.1 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 2010. 9. 28 REVERSE CURRENT IR (mA) FORWARD CURRENT IF (A) 100 Revision No : 0 1 100 Tj =150 C 10 Tj =125 C 1 Tj =75 C 0.1 0.01 Tj =25 C 0.001 0.0001 0 20 40 60 80 100 120 REVERSE VOLTAGE VR (V) 2/2