SEMICONDUCTOR MBRD10U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K D L : IO=10A. ・Repetitive Peak Reverse Voltage B : VRRM=100V. ・Low Reverse Current. H J E N G F F M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Repetitive Peak Reverse Voltage Average Output Rectified Current (Tc=114℃) (Note) Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VRRM 100 V IO 10 A IFSM 45 A Tj -40～150 ℃ Tstg -55～150 ℃ 1 2 1. N.C. 3 2. CATHODE 3. ANODE DPAK (1) 2 Note : average forward current of centertap full wave connection. 1 3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Peak Forward Voltage (Note) Repetitive Peak Reverse Current (Note) Thermal Resistance (Note) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VFM IFM=5A - - 0.85 V IRRM VRRM=100V - 2 50 µA Rth(j-c) Juction to Case - - 6.0 ℃/W Note : A value of one cell 2010. 10. 8 Revision No : 0 1/2 MBRD10U100CT IF - VF IR - VR 10 Tj =150 C Tj =25 C 1 0.1 Tj =75 C 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 2010. 10. 8 REVERSE CURRENT IR (mA) FORWARD CURRENT IF (A) 100 Revision No : 0 1 10 1 Tj =125 C 0.1 Tj =75 C 0.01 0.001 0.0001 Tj =25 C 0 20 40 60 80 100 120 REVERSE VOLTAGE VR (V) 2/2