SEMICONDUCTOR MBRP30U200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. R Q FEATURES O A B S K DIM MILLIMETERS A 15.90 +_ 0.30 B 5.00 +_ 0.20 C 20.85 +_ 0.30 D 3.00 +_ 0.20 E 2.00 +_ 0.20 F 1.20 +_ 0.20 Max. 4.50 G H 20.10 +_ 0.70 0.60 +_ 0.02 I J 14.70 +_ 0.20 K 2.00 +_ 0.10 3.19 +_ 0.20 L 2.40 +_ 0.20 M 13.26 N O 3.70 +_ 0.20 5.45 +_ 0.30 P Q 3.60 +_ 0.20 R 7.19 +_ 0.10 S 4.57 U ・Average Output Rectified Current U : IO=30A. C ・Repetitive Peak Reverse Voltage J N : VRRM=200V. L G ・Fast Reverse Recovery Time : trr=35ns. H D M E I F MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Repetitive Peak Reverse Voltage Average Output Rectified Current (Note) Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VRRM 200 V IO 30 A IFSM 300 A Tj -40～150 ℃ Tstg -55～150 ℃ P 1 P 2 3 TO-247 2 Note : average forward current of centertap full wave connection. 1 3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Peak Forward Voltage (Note) Repetitive Peak SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VFM IFM=15A - - 0.95 V IRRM VRRM=Rated - - 50 ㎂ IF=0.5A, IR=1.0A, IRR=0.25A(25%) - - 35 ns Juction to Case - - 3 ℃/W Reverse Current (Note) Reverse Recovery Time (Note) trr Thermal Resistance (Note) Rth(j-c) Note : A value of one cell 2011. 6. 14 Revision No : 1 1/2 MBRP30U200CT IR - V R FORWARD CURRENT IF (A) 20 17 Tj =125 C 14 Tj =75 C 11 8 Tj =25 C 5 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE VF (V) 2011. 6. 14 Revision No : 1 1.0 REVERSE CURRENT IR (µA) IF - V F 10000 Tj =125 C 1000 Tj =75 C 100 10 Tj =25 C 0.1 0.01 0.001 0 20 40 60 80 100 120 140 160 180 200 REVERSE VOLTAGE VR (V) 2/2