KEC PF0165UDF8

SEMICONDUCTOR
PF0165UDF8
TECHNICAL DATA
EMI Filtering TVS
EMI Filtering TVS For Wireless Headsets.
TENTATIVE
FEATURES
EMI/RFI filtering.
C
A
ESD Protection to IEC 61000-4-2 Level 4.
E
1
G
4
B
Good attenuation of high frequency signals.
F
Low insertion loss.
GND PAD
H
Pin 1
Low clamping voltage.
Low operating and leakage current.
8
BOTTEM VIEW
TOP VIEW
J
K
DIM
A
B
C
D
E
F
G
H
J
K
L
L
SIDE VIEW
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
RATING
UNIT
*PD
400
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
Power Dissipation
D 5
1,8 : Filter channel 1
2,7 : Filter channel 2
3,6 : Filter channel 3
4,5 : Filter channel 4
MILLIMETERS
1.80
1.20
_ 0.10
1.00 +
_ 0.05
0.20 +
0.40
_ 0.10
0.30 +
_ 0.05
0.25 +
0.20 Min
_ 0.05
0.50 +
0.125
0.03+0.02/-0.03
UDFN-8
-55 150
* Total Package Power Dissipation
EQUIVALENT CIRCUIT
MARKING
Type Name
10Ω
FILTERn*
T4
65pF
65pF
0 A
FILTERn*
Lot No.
GND
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Reverse Stand-Off Voltage
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VRWM
-
-
-
5
V
It=1mA
6
-
-
V
A
VBR
Reverse Breakdown Voltage
Reverse Leakage Current
IR
VRWM=3.3V
-
-
0.5
Resistance
R
Between Input and Output
-
10
-
C0V
VR=0V, Between I/O Pins and GND
-
200
-
C2.5V
VR=2.5V, Between I/O Pins and GND
-
130
-
Capacitance
2007. 1. 8
pF
Revision No : 0
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