SEMICONDUCTOR PF0165UDF8 TECHNICAL DATA EMI Filtering TVS EMI Filtering TVS For Wireless Headsets. TENTATIVE FEATURES EMI/RFI filtering. C A ESD Protection to IEC 61000-4-2 Level 4. E 1 G 4 B Good attenuation of high frequency signals. F Low insertion loss. GND PAD H Pin 1 Low clamping voltage. Low operating and leakage current. 8 BOTTEM VIEW TOP VIEW J K DIM A B C D E F G H J K L L SIDE VIEW MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT *PD 400 mW Junction Temperature Tj 150 Storage Temperature Tstg Power Dissipation D 5 1,8 : Filter channel 1 2,7 : Filter channel 2 3,6 : Filter channel 3 4,5 : Filter channel 4 MILLIMETERS 1.80 1.20 _ 0.10 1.00 + _ 0.05 0.20 + 0.40 _ 0.10 0.30 + _ 0.05 0.25 + 0.20 Min _ 0.05 0.50 + 0.125 0.03+0.02/-0.03 UDFN-8 -55 150 * Total Package Power Dissipation EQUIVALENT CIRCUIT MARKING Type Name 10Ω FILTERn* T4 65pF 65pF 0 A FILTERn* Lot No. GND ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V It=1mA 6 - - V A VBR Reverse Breakdown Voltage Reverse Leakage Current IR VRWM=3.3V - - 0.5 Resistance R Between Input and Output - 10 - C0V VR=0V, Between I/O Pins and GND - 200 - C2.5V VR=2.5V, Between I/O Pins and GND - 130 - Capacitance 2007. 1. 8 pF Revision No : 0 1/1