SEMICONDUCTOR PF0380UDF8 TECHNICAL DATA EMI Filtering TVS EMI Filtering TVS For Wireless Headsets. TENTATIVE FEATURES EMI/RFI filtering. C A ESD Protection to IEC 61000-4-2 Level 4. E 1 G 4 B Good attenuation of high frequency signals. F Low insertion loss. GND PAD H Pin 1 Low clamping voltage. Low operating and leakage current. 8 BOTTEM VIEW TOP VIEW J K DIM A B C D E F G H J K L L SIDE VIEW MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT *PD 400 mW Junction Temperature Tj 150 Storage Temperature Tstg Power Dissipation D 5 1,8 : Filter channel 1 2,7 : Filter channel 2 3,6 : Filter channel 3 4,5 : Filter channel 4 MILLIMETERS 1.80 1.20 _ 0.10 1.00 + _ 0.05 0.20 + 0.40 _ 0.10 0.30 + _ 0.05 0.25 + 0.20 Min _ 0.05 0.50 + 0.125 0.03+0.02/-0.03 UDFN-8 -55 150 * Total Package Power Dissipation EQUIVALENT CIRCUIT MARKING 2.9nH FILTERn* FILTERn* 80pF 80pF T5 0 A Type Name Lot No. GND ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 12 V 13.7 - 17.7 V VBR Reverse Breakdown Voltage It=1mA Reverse Leakage Current IR VRWM=12V - - 0.1 A Inductance L Between Input and Output - 2.9 - nH C0V VR=0V, Between I/O Pins and GND - 250 - C2.5V VR=2.5V, Between I/O Pins and GND - 160 - Between I/O Pins and GND - 0.28 - Capacitance pF RS Series Resistance 2007. 1. 8 Revision No : 0 1/1