SEMICONDUCTOR PG15FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 BD 1 0 1 2 1 No. Item Marking Description Device Mark BD PG15FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C) 4 (D) 5 (E) 6 (F) 7 (G) 8 (H) 9 (I) 0 (J) 2nd Character A (1) B (2) C (3) D (4) E (5) F (6) G (7) H (8) I (9) J (0) Year Marking (Week) Periode (Year) 1 st Year (2006) 01 02 51 52 2006-2010-2014... 2 nd Year (2007) 0A 0B 5A 5B 2007-2011-2015... 4 rd Year (2008) J1 J2 E1 E2 2008-2012-2016... 4 th Year (2009) JA JB EA EB 2009-2013-2017... Remark Rotation for 4 years 2008. 9. 11 Revision No : 0 1/1