KEC KDR784

SEMICONDUCTOR
KDR784
TECHNICAL DATA
SCHOTTKY BARRIER TYPE DIODE
LOW VOLTAGE HIGH SPEED SWITCHING.
CATHODE MARK
L
K
A
Low Forward Voltage : VF(3)=0.42V(Typ.)
1
E
FEATURES
G
B
H
F
Small Package : USC.
2
J
D
C
I
MAXIMUM RATING (Ta=25
DIM
A
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
VRM
30
V
Reverse Voltage
VR
30
V
Maximum (Peak) Forward Current
IFM
300
mA
Average Forward Current
IO
100
mA
IFSM
1
A
Power Dissipation
PD
200*
mW
Junction Temperature
Tj
125
Tstg
-55 125
Maximum (Peak) Reverse Voltage
Surge Current (10ms)
Storage Temperature Range
MILLIMETERS
_ 0.1
2.50 +
_ 0.05
1.25 +
_ 0.05
0.90 +
B
C
M
D
M
0.30+0.06/-0.04
_ 0.05
1.70 +
E
MIN 0.17
_ 0.03
0.126 +
0~0.1
1.0 MAX
_ 0.05
0.15 +
F
G
H
I
1. ANODE
2. CATHODE
J
K
L
M
_ 0.05
0.4 +
2 +4/-2
4~6
USC
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
Marking
Type Name
UU
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Forward Voltage
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
VF(1)
IF=1mA
-
0.26
0.35
VF(2)
IF=5mA
-
0.30
0.40
VF(3)
IF=100mA
-
0.42
0.55
UNIT
V
Reverse Current
IR
VR=30V
-
-
15
A
Total Capacitance
CT
VR=1V, f=1MHz
-
40
-
pF
2003. 2. 25
Revision No : 2
1/1