SEMICONDUCTOR KDR784 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. CATHODE MARK L K A Low Forward Voltage : VF(3)=0.42V(Typ.) 1 E FEATURES G B H F Small Package : USC. 2 J D C I MAXIMUM RATING (Ta=25 DIM A ) CHARACTERISTIC SYMBOL RATING UNIT VRM 30 V Reverse Voltage VR 30 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA IFSM 1 A Power Dissipation PD 200* mW Junction Temperature Tj 125 Tstg -55 125 Maximum (Peak) Reverse Voltage Surge Current (10ms) Storage Temperature Range MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + B C M D M 0.30+0.06/-0.04 _ 0.05 1.70 + E MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + F G H I 1. ANODE 2. CATHODE J K L M _ 0.05 0.4 + 2 +4/-2 4~6 USC * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Marking Type Name UU ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.26 0.35 VF(2) IF=5mA - 0.30 0.40 VF(3) IF=100mA - 0.42 0.55 UNIT V Reverse Current IR VR=30V - - 15 A Total Capacitance CT VR=1V, f=1MHz - 40 - pF 2003. 2. 25 Revision No : 2 1/1