SEMICONDUCTOR USFZ4.3V~36V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. B A H G FEATURES ・Nominal Voltage Tolerance About ±10%. C E F ・Small Power Mold Type : USF 2 C E D 1 CATHODE MARK MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Power Dissipation PD 500 mW Junction Temperature Tj 150 ℃ Tstg Storage Temperature Range I J A B C D E 1. ANODE -55~150 DIM ℃ F 2. CATHODE G H I J MILLIMETERS _ 0.1 1.9 + _ 0.1 2.5 + _ 0.05 0.61 + _ 0.1 0.8 + _ 0.05 0.91 + _ 0.1 1.2 + _ 0.1 1.3 + _ 0.1 0.46 + _ 0.05 0.11 + _ 0.1 0.6 + USF Marking Type Name Lot No. CATHODE MARK. Type No. Marking Type No. Marking Type No. Marking Type No. Marking USFZ4.3V 43 USFZ7.5V 75 USFZ13V 13 USFZ24V 24 USFZ4.7V 47 USFZ8.2V 82 USFZ15V 15 USFZ27V 27 USFZ5.1V 51 USFZ9.1V 91 USFZ16V 16 USFZ30V 30 USFZ5.6V 56 USFZ10V 10 USFZ18V 18 USFZ33V 33 USFZ6.2V 62 USFZ11V 11 USFZ20V 20 USFZ36V 36 USFZ6.8V 68 USFZ12V 12 USFZ22V 22 2010. 11. 23 Rvision No : 0 1/2 USFZ4.3V~36V ELECTRICAL CHARACTERISTICS (Ta=25℃) Reverse Current IR (μA) Zener Voltage Vz (V) TYPE No. Min. Typ. Max. Iz (mA) Max. VR(V) USFZ4.3V 3.9 4.35 4.8 10 10 1.0 USFZ4.7V 4.3 4.75 5.2 10 10 1.0 USFZ5.1V 4.6 5.10 5.6 10 10 1.5 USFZ5.6V 5.1 5.6 6.1 10 10 2.5 USFZ6.2V 5.6 6.2 6.8 10 10 3.0 USFZ6.8V 6.2 6.8 7.4 10 10 3.5 USFZ7.5V 6.8 7.5 8.3 10 10 4.5 USFZ8.2V 7.4 8.2 9.0 10 10 4.9 USFZ9.1V 8.2 9.1 10.0 10 10 5.5 USFZ10V 9.0 10 11 10 10 6.0 USFZ11V 9.9 11 12.1 10 10 7.0 USFZ12V 10.8 12 13.2 10 10 8.0 USFZ13V 11.7 13 14.3 10 10 9.0 USFZ15V 13.5 15 16.5 10 10 10.0 USFZ16V 14.4 16 17.6 10 10 11.0 USFZ18V 16.2 18 19.8 10 10 12.0 USFZ20V 18.0 20 22.0 10 10 14.0 USFZ22V 19.8 22 24.2 10 10 15.0 USFZ24V 21.6 24 26.4 10 10 16.0 USFZ27V 24.3 27 29.7 10 10 19.0 USFZ30V 27.0 30 33.0 10 10 21.0 USFZ33V 29.7 33 36.3 10 10 23.0 USFZ36V 32.4 36 39.6 10 10 25.0 ※The Zener voltage (VZ) is measured 40ms after power is supplied. 2010. 11. 23 Revision No : 0 2/2