SEMICONDUCTOR USFB053 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A H G FEATURES Low Profile Surface Mount Package. C E F Low Power Loss, High Efficiency. 2 For Use in Low Voltage, High Frequency inverters, Free C E D 1 CATHODE MARK Wheeling, and Polarity Protection Applications. APPLICATION I J DIM A Switching Power Supply. MILLIMETERS _ 0.1 1.9 + _ 0.1 2.5 + _ 0.05 0.61 + _ 0.1 0.8 + _ 0.05 0.91 + _ 0.1 1.2 + _ 0.1 1.3 + _ 0.1 0.46 + _ 0.05 0.11 + _ 0.1 0.6 + B C Reversed Battery Connection Protection. D DC/DC Converter. E Cellular Phones. 1. ANODE F 2. CATHODE G H I J MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Maximum Repetitive Peak Reverse Voltage VRRM 30 V IO 0.5 A IFSM 5 A 667 mW Average Output Rectified Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Power Dissipation PD * Junction Temperature Tj -40 125 Tstg -40 125 Storage Temperature Range USF Marking Lot No. Type Name * Mounted on a glass epoxy board (Soldering land : 6mm 6mm) 53 CATHODE MARK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=0.5A - 0.35 0.39 V Repetitive Peak Reverse Current IRRM VRRM=30V - 40 200 A VR=10V, f=1.0MHz - 30 - pF Cj Junction Capacitance 2005. 12. 1 Revision No : 1 1/2 USFB053 CJ JUNCTION CAPACITANCE CJ (pF) 1000 Ta=150Ƅ Ta=125Ƅ Ta=75Ƅ 100 Ta=25Ƅ 10 1 0 100 200 300 - VR 1000 f=1MHz Ta=25 C 100 10 500 1 20 10 30 INSTANTANEOUS FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) SURGE FORWARD CURRENT (NON - REPETITIVE) Ta MAX - I F(AV) 20 Ta=25 C 8.3ms 8.3ms 1cyc. 10 0 1 10 NUMBER OF CYCLES 2005. 12. 1 400 Revision No : 1 100 MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX ( C) PEAK SURGE FORWARD CURRENT I FSM (A) INSTANTANEOUS FORWARD CURRENT I F (A) I F - VF 125 IO 0A 0V 100 VR D=t/T VR=15V Tj=125 C t T 75 50 25 Sin (ҋ=180) D=1/2 0.8 1.2 DC 0 0 0.4 1.6 2.0 AVERAGE FORWARD CURRENT I F(AV) (A) 2/2