KEC USFB053

SEMICONDUCTOR
USFB053
TECHNICAL DATA
SCHOTTKY BARRIER TYPE DIODE
SWITCHING TYPE POWER SUPPLY APPLICATIONS.
B
A
H
G
FEATURES
Low Profile Surface Mount Package.
C
E
F
Low Power Loss, High Efficiency.
2
For Use in Low Voltage, High Frequency inverters, Free
C
E D
1
CATHODE MARK
Wheeling, and Polarity Protection Applications.
APPLICATION
I
J
DIM
A
Switching Power Supply.
MILLIMETERS
_ 0.1
1.9 +
_ 0.1
2.5 +
_ 0.05
0.61 +
_ 0.1
0.8 +
_ 0.05
0.91 +
_ 0.1
1.2 +
_ 0.1
1.3 +
_ 0.1
0.46 +
_ 0.05
0.11 +
_ 0.1
0.6 +
B
C
Reversed Battery Connection Protection.
D
DC/DC Converter.
E
Cellular Phones.
1. ANODE
F
2. CATHODE
G
H
I
J
MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
30
V
IO
0.5
A
IFSM
5
A
667
mW
Average Output Rectified Current
Peak One Cycle Surge Forward Current
(Non-Repetitive 60Hz)
Power Dissipation
PD *
Junction Temperature
Tj
-40 125
Tstg
-40 125
Storage Temperature Range
USF
Marking
Lot No.
Type Name
* Mounted on a glass epoxy board (Soldering land : 6mm 6mm)
53
CATHODE MARK
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
VFM
IFM=0.5A
-
0.35
0.39
V
Repetitive Peak Reverse Current
IRRM
VRRM=30V
-
40
200
A
VR=10V, f=1.0MHz
-
30
-
pF
Cj
Junction Capacitance
2005. 12. 1
Revision No : 1
1/2
USFB053
CJ
JUNCTION CAPACITANCE CJ (pF)
1000
Ta=150Ƅ
Ta=125Ƅ
Ta=75Ƅ
100
Ta=25Ƅ
10
1
0
100
200
300
-
VR
1000
f=1MHz
Ta=25 C
100
10
500
1
20
10
30
INSTANTANEOUS FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
SURGE FORWARD CURRENT
(NON - REPETITIVE)
Ta MAX - I F(AV)
20
Ta=25 C
8.3ms
8.3ms
1cyc.
10
0
1
10
NUMBER OF CYCLES
2005. 12. 1
400
Revision No : 1
100
MAXIMUM ALLOWABLE AMBIENT
TEMPERATURE Ta MAX ( C)
PEAK SURGE FORWARD CURRENT
I FSM (A)
INSTANTANEOUS FORWARD CURRENT
I F (A)
I F - VF
125
IO
0A
0V
100
VR
D=t/T
VR=15V
Tj=125 C
t
T
75
50
25
Sin (ҋ=180)
D=1/2
0.8
1.2
DC
0
0
0.4
1.6
2.0
AVERAGE FORWARD CURRENT I F(AV) (A)
2/2