Diodes SMD Type Silicon Epitaxial Schottky Barrier Type 1SS372 Features Small package Low forward voltage : VF = 0.23V (typ.) @ IF=5mA 1 ANODE 3 CATHODE/ANOD 2 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Maximum (Peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Average forward current IO 100 * mA Maximum (Peak) forward current IFM 200 * mA Surge current (10ms) IFSM 1* A P 100 mW Power dissipation Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Operating Temperature Range Topr -40 to 100 *Unit Rating .Total Rating= Unit RatingX0.7 Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage VF Testconditons Min Typ Max Unit V IF = 1mA 0.18 IF = 5mA 0.23 0.30 IF = 100mA 0.35 0.50 Reverse current IR VR = 10V Total capacitance CT VR = 0, f = 1MHz 20 20 ìA 40 pF Marking Marking N9 www.kexin.com.cn 1