KEXIN 1SS372

Diodes
SMD Type
Silicon Epitaxial Schottky Barrier Type
1SS372
Features
Small package
Low forward voltage : VF = 0.23V (typ.) @ IF=5mA
1 ANODE
3 CATHODE/ANOD
2 CATHODE
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Maximum (Peak) reverse voltage
VRM
15
V
Reverse voltage
VR
10
V
Average forward current
IO
100 *
mA
Maximum (Peak) forward current
IFM
200 *
mA
Surge current (10ms)
IFSM
1*
A
P
100
mW
Power dissipation
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Operating Temperature Range
Topr
-40 to 100
*Unit Rating .Total Rating= Unit RatingX0.7
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Testconditons
Min
Typ
Max
Unit
V
IF = 1mA
0.18
IF = 5mA
0.23
0.30
IF = 100mA
0.35
0.50
Reverse current
IR
VR = 10V
Total capacitance
CT
VR = 0, f = 1MHz
20
20
ìA
40
pF
Marking
Marking
N9
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