Diodes SMD Type Silicon Epitaxial Planar Type 1SS307 Features SOT-23 3 +0.1 2.4-0.1 :CT = 3.0 pF(Typ) 0.4 :IR= 0.1 nA (Typ) 1 0.55 Low reverse Current +0.1 1.3-0.1 :VF =1.0 V(Typ) Small total capacitance Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low forward voltage 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Maximum (peak) reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Average forward current IO 100 mA Maximum (peak) forward current IFM 300 mA Surge current (10 ms) IFSM 2 A P 150 mW Power dissipation Junction Temperature Tj 125 Storage Temperature Tstg -55 + 125 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit 1.3 V VF IF = 100 mA 1.0 Reverse current IR VR = 30 V 0.1 10 nA Total capacitance CT VR = 0, f = 1.0 MHz 3.0 6.0 pF Forward voltage Marking Marking C9 www.kexin.com.cn 1