KODENSHI SDB20D80D2

SDB20D80D2
Schottky Barrier Rectifier
HIGH VOLTAGE SCHOTTKY RECTIFIER
Features
 Low forward voltage drop and leakage current
4
 Low power loss and High efficiency
 Guard-ring for overvoltage protection
 Dual common cathode rectifier
1
 Full lead (Pb)-free and RoHS compliant device
2, 4
3
Pin 1, 3: Anode
123
Pin 2, 4: Cathode
Applications
D2-PAK
 Power supply - Output rectification
Product Characteristics
 High efficiency SMPS
 Free-wheeling diode
IF(AV)
2 X 10A
 Reverse battery protection
VRRM
80V
VFM at 125℃
0.65V (Typ.)
IFSM
150A
 DC to DC systems
Description
The SDB20D80D2 has two schottky barriers arranged in a common cathode configuration. Typical
applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery
protection.
Ordering Information
Device
Marking Code
Package
Packaging
SDB20D80D2
SDB20D80D2
D2-PAK
Tape & Reel
Marking Information
AUK = Manufacture Logo
∆ = Control Code of Manufacture
AUK
ΔYMDD
SDB20D80D2
YMDD = Date Code Marking
-. Y = Year Code
-. M = Monthly Code
-. DD = Daily Code
SDB20D80D2 = Specific Device Code
KSD-D6S007-001
1
SDB20D80D2
Absolute Maximum Ratings (Limiting Values, Per diode)
Characteristic
Symbol
Value
Unit
VRRM
VRWM
VR
80
V
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
per diode
10
Maximum average forward rectified current
IF(AV)
A
total device
20
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Storage temperature range
Tstg
-45℃ to +150℃
℃
Tj
150
℃
Symbol
Value
Unit
Maximum operating junction temperature
Thermal Characteristics
Characteristic
per diode
3.0
Maximum thermal resistance junction to case
℃/W
Rth(j-c)
total device
2.8
Electrical Characteristics (Per Diode)
Characteristic
Symbol
VFM (1)
Peak forward voltage drop
IRM (1)
Reverse leakage current
Junction capacitance
Cj
Test Condition
Min.
Typ.
Max.
Unit
Tj=25℃
-
0.70
0.80
V
Tj=125℃
-
0.65
0.72
V
Tj=25℃
-
-
0.6
mA
Tj=125℃
-
-
100
mA
-
550
-
pF
IFM = 10A
VR = VRRM
VR = 1VDC, f=1MHz
Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2%
To evaluate the conduction losses use the following equation: PF = 0.36 x IF(AV) + 0.0335 IF2(RMS)
IFM
Forward Voltage : VFM = Vto + rd IFM
2 IF(AV)
rd
Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS)
IF(AV)
Vto
VFM
KSD-D6S007-001
2
SDB20D80D2
Rating and Characteristic Curves
Fig. 2) Typical Reverse Characteristics (Per diode)
㎃
Fig. 1) Typical Forward Characteristics (Per diode)
Fig. 3) Maximum Forward Derative Curve
Fig. 4) Forward Power Dissipation (Per diode)
Fig. 5) Maximum Non-Repetitive Peak Forward
Surge Current (Per diode)
Fig. 6) Typical Junction Capacitance (Per diode)
KSD-D6S007-001
3
SDB20D80D2
Package Outline Dimension
※ Recommend PCB solder land [Unit: mm]
KSD-D6S007-001
4
SDB20D80D2
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-D6S007-001
5