SDB10200DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features Low forward voltage drop and leakage current Low power loss and High efficiency High surge capability Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode Pin 2, 4: Cathode Halogen-free device and RoHS compliant device TO-252 TO-252 Applications Power supply - Output rectification Product Characteristics Converter Free-wheeling diode IF(AV) 2 X 5A Reverse battery protection VRRM 200V VFM at 125℃ 0.72V (Typ.) IFSM 120A Power inverters Description The SDB10200DI has two schottky barriers arranged in a common cathode configuration. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Ordering Information Device Marking Code Package Packaging SDB10200DI SDB10200DI TO-252 Tape & Reel Marking Information SDB10200DI = Specific Device Code SDB10200DI YWW YWW = Year & Week Code Marking -. Y = Year Code -. WW = Week Code KSD-D6O018-001 1 SDB10200DI Absolute Maximum Ratings (Limiting Values) Characteristic Symbol Value Unit VRRM VRWM VR 200 V Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage per diode 5 Maximum average forward rectified current IF(AV) A total device 10 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode IFSM 120 A Storage temperature range Tstg -45℃ to +150℃ ℃ Tj 150 ℃ Symbol Value Unit Maximum operating junction temperature Thermal Characteristics Characteristic per diode 6.0 Maximum thermal resistance junction to case ℃/W Rth(j-c) total device 5.6 Electrical Characteristics (Per Diode) Characteristic Symbol VFM (1) Peak forward voltage drop IRM (1) Reverse leakage current Junction capacitance Cj Test Condition Min. Typ. Max. Unit Tj=25℃ - 0.85 0.95 V Tj=125℃ - 0.72 0.76 V Tj=25℃ - - 10 uA Tj=125℃ - - 10 mA - 150 - pF IFM = 5A VR = VRRM VR = 1VDC, f=1MHz Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% To evaluate the conduction losses use the following equation: PF = 0.68 IF(AV) + 0.032 IF2(RMS) IFM Forward Voltage : VFM = Vto + rd IFM 2 IF(AV) rd Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS) IF(AV) VFM Vto KSD-D6O018-001 2 SDB10200DI Rating and Characteristic Curves Fig. 2) Typical Reverse Characteristics (Per diode) ㎂ Fig. 1) Typical Forward Characteristics (Per diode) Fig. 3) Maximum Forward Derative Curve Fig. 4) Forward Power Dissipation (Per diode) Fig. 5) Maximum Non-Repetitive Peak Forward Surge Current (Per diode) Fig. 6) Typical Junction Capacitance (Per diode) KSD-D6O018-001 3 SDB10200DI Package Outline Dimension ※ Recommended Land Pattern [unit: mm] 2.50 7.00 7.00 1.50 4.60 KSD-D6O018-001 4 SDB10200DI The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-D6O018-001 5