KODENSHI SDB10200DI

SDB10200DI
Schottky Barrier Rectifier
DUAL COMMON CATHODE SCHOTTKY RECTIFIER
Features
 Low forward voltage drop and leakage current
 Low power loss and High efficiency
 High surge capability
 Dual common cathode rectifier
Pin Configuration
Pin 1, 3: Anode
Pin 2, 4: Cathode
 Halogen-free device and RoHS compliant device
TO-252
TO-252
Applications
 Power supply - Output rectification
Product Characteristics
 Converter
 Free-wheeling diode
IF(AV)
2 X 5A
 Reverse battery protection
VRRM
200V
VFM at 125℃
0.72V (Typ.)
IFSM
120A
 Power inverters
Description
The SDB10200DI has two schottky barriers arranged in a common cathode configuration. Typical
applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery
protection.
Ordering Information
Device
Marking Code
Package
Packaging
SDB10200DI
SDB10200DI
TO-252
Tape & Reel
Marking Information
SDB10200DI = Specific Device Code
SDB10200DI
YWW
YWW = Year & Week Code Marking
-. Y = Year Code
-. WW = Week Code
KSD-D6O018-001
1
SDB10200DI
Absolute Maximum Ratings (Limiting Values)
Characteristic
Symbol
Value
Unit
VRRM
VRWM
VR
200
V
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
per diode
5
Maximum average forward rectified current
IF(AV)
A
total device
10
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
IFSM
120
A
Storage temperature range
Tstg
-45℃ to +150℃
℃
Tj
150
℃
Symbol
Value
Unit
Maximum operating junction temperature
Thermal Characteristics
Characteristic
per diode
6.0
Maximum thermal resistance junction to case
℃/W
Rth(j-c)
total device
5.6
Electrical Characteristics (Per Diode)
Characteristic
Symbol
VFM (1)
Peak forward voltage drop
IRM (1)
Reverse leakage current
Junction capacitance
Cj
Test Condition
Min.
Typ.
Max.
Unit
Tj=25℃
-
0.85
0.95
V
Tj=125℃
-
0.72
0.76
V
Tj=25℃
-
-
10
uA
Tj=125℃
-
-
10
mA
-
150
-
pF
IFM = 5A
VR = VRRM
VR = 1VDC, f=1MHz
Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2%
To evaluate the conduction losses use the following equation: PF = 0.68 IF(AV) + 0.032 IF2(RMS)
IFM
Forward Voltage : VFM = Vto + rd IFM
2 IF(AV)
rd
Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS)
IF(AV)
VFM
Vto
KSD-D6O018-001
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SDB10200DI
Rating and Characteristic Curves
Fig. 2) Typical Reverse Characteristics (Per diode)
㎂
Fig. 1) Typical Forward Characteristics (Per diode)
Fig. 3) Maximum Forward Derative Curve
Fig. 4) Forward Power Dissipation (Per diode)
Fig. 5) Maximum Non-Repetitive Peak Forward
Surge Current (Per diode)
Fig. 6) Typical Junction Capacitance (Per diode)
KSD-D6O018-001
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SDB10200DI
Package Outline Dimension
※ Recommended Land Pattern [unit: mm]
2.50
7.00
7.00
1.50
4.60
KSD-D6O018-001
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SDB10200DI
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-D6O018-001
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