LIGITEK LDD845-6EGR-XX-PF

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
DUAL DIGIT LED DISPLAY (0.8 Inch)
Pb
Lead-Free Parts
LDD845/6EGR-XX-PF
DATA SHEET
DOC. NO
:
QW0905- LDD845/6EGR-XX-PF
REV.
:
A
DATE
: 30 - Oct. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD845/6EGR-XX-PF
Page 1/9
Package Dimensions
10.0
(0.39")
35.6(1.4")
25.7
(1.0")
20.1
(0.8")
22.0
(0.87")
LDD846EGR-XX-PF
LIGITEK
A
F
B
G
E
5.5±0.5
ψ0.51
TYP
C
D
DP
2.54*8=20.32(0.8")
Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25(0.01") unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD845/6EGR-XX-PF
Page 2/9
Internal Circuit Diagram
LDD845EGR-XX-PF
5
14
DIG.1
A
DIG.2
B
C
D
G
F
E
DP
A
B
C
D
G
F
E
DP
17121611 3 8 2 7 1 6 18131510 4 9
LDD846EGR-XX-PF
5
14
DIG.1
A
DIG.2
B
C
D
E
F
G
DP
171216 11 3 8 2 7 1 6 18131510 4 9
E G
A
B
C
D
E
F
G
DP
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/9
PART NO. LDD845/6EGR-XX-PF
Electrical Connection
PIN NO.
LDD845EGR-XX-PF
PIN NO.
LDD846EGR-XX-PF
1
Anode E (R)
1
Cathode E (R)
2
Anode D (R)
2
Cathode D (R)
3
Anode C (R)
3
Cathode C (R)
4
Anode DP (R)
4
Cathode DP (R)
5
Common Cathode Dig.1
5
Common Anode Dig.1
6
Anode E (G)
6
Cathode E (G)
7
Anode D (G)
7
Cathode D (G)
8
Anode C (G)
8
Cathode C (G)
9
Anode DP (G)
9
Cathode DP (G)
10
Anode G (G)
10
Cathode G (G)
11
Anode B (G)
11
Cathode B (G)
12
Anode A (G)
12
Cathode A (G)
13
Anode F (G)
13
Cathode F (G)
14
Common Cathode Dig.2
14
Common Anode Dig.2
15
Anode G (R)
15
Cathode G (R)
16
Anode B (R)
16
Cathode B (R)
17
Anode A (R)
17
Cathode A (R)
18
Anode F (R)
18
Cathode F (R)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD845/6EGR-XX-PF
Page 4/9
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
E
G
Forward Current Per Chip
IF
30
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
120
120
mA
Power Dissipation Per Chip
PD
100
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
Material Emitted or anode
CHIP
PART NO
GaAsP/GaP Orange
LDD845EGR-XX-PF
GaP
Green
GaAsP/GaP Orange
LDD846EGR-XX-PF
GaP
Green
Common
Cathode
Common
Anode
Electrical
λP
△λ
(nm)
(nm)
Vf(v)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
640
45
1.7
2.1
2.6
1.0
565
30
1.7
2.1
2.6
1.75 3.05
640
45
1.7
2.1
2.6
1.0
565
30
1.7
2.1
2.6
1.75 3.05
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
1.75
2:1
1.75
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD845/6EGR-XX-PF
Page 5/9
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λp
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 6/9
PART NO. LDD845/6EGR-XX-PF
Typical Electro-Optical Characteristics Curve
E CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
1.2
Relative [email protected]
Normalize @25℃
Forward [email protected]
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
100
Relative [email protected]
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
550
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
750
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD845/6EGR-XX-PF
Page 7/9
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative [email protected]
Fig.4 Relative Intensity vs. Temperature
Relative [email protected]
Normalize @25℃
Forward [email protected]
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD845/6EGR-XX-PF
Page 8/9
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350°C Max
Soldering Time:3 Seconds Max(One time only)
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260° C
2.Wave Soldering Profile
Dip Soldering
Preheat: 120° C Max
Preheat time: 60seconds Max
Ramp-up
2°C/sec(max)
Ramp-Down:-5°C/sec(max)
Solder Bath:260° C Max
Dipping Time:3 seconds Max
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260°C
Temp(°C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
50
100
60 Seconds Max
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
150
Time(sec)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LDD845/6EGR-XX-PF
Page 9/9
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11