LITEON LTV-356T-V

LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
FEATURES
* This specification shall be applied to photocoupler. Model No. LTV-356T as an option.
* Current transfer ratio ( CTR : MIN. 50% at IF = 5mA, VCE = 5V )
* High input-output isolation voltage ( Viso = 3,750Vrms )
* High collector-emitter voltage ( VCEO = 80V )
* Employs double transfer mold technology
* Subminiature type
( The volume is smaller than that of conventional DIP type by as far as 30% )
* Mini-flat package :
2.0mm profile : LTV-356T-V
* UL approved ( No. E113898 )
* CUL approved ( No. E113898 , 01SC19287 )
* CSA approved ( No. 1243207 )
* FIMKO approved ( No. FI-16420 )
* NEMKO approved ( No. P01100403 )
* DEMKO approved ( No. 310475-01 )
* SEMKO approved ( No. 0109173 / 01-08 )
* VDE approved ( No. 094722 )
* RoHS compliance
APPLICATIONS
* Hybrid substrates that require high density mounting.
* Programmable controllers
Part No. : LTV-356T-V
BNS-OD-C131/A4
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OUTLINE DIMENSIONS
LTV-356T-V :
2.54±0.25
Pin No. and Internal
connection diagram
Date Code *1
3
4.40±0.2
4
VDE 0884
IDENTIFICATION
FACTORY CODE. *2
BIN NO. *3
2
3. Emitter
4. Collector
5.30±0.3
0.10±0.1
2.00±0.2
0.2±0.05
3.85±0.3
1
1. Anode
2. Cathode
0.40±0.1
7.00+0.2
-0.7
*1. 2-digit date code.
*2. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
*3. Rank shall be or shall not be marked.
Part No. : LTV-356T-V
BNS-OD-C131/A4
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TAPING DIMENSIONS
Description
Tape wide
Pitch of sprocket holes
Distance of compartment
Distance of compartment to compartment
Part No. : LTV-356T-V
BNS-OD-C131/A4
Symbol
W
P0
F
P2
P1
Dimensions in mm ( inches )
12 ± 0.3 ( .47 )
4 ± 0.1 ( .15 )
5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
8 ± 0.1 ( .315 )
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ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER
SYMBOL
RATING
UNIT
Forward Current
IF
50
mA
Reverse Voltage
VR
6
V
Power Dissipation
P
70
mW
Collector - Emitter Voltage
VCEO
80
V
Emitter - Collector Voltage
VECO
6
V
Collector Current
IC
50
mA
Collector Power Dissipation
PC
150
mW
Ptot
170
mW
Viso
3,750
Vrms
Operating Temperature
Topr
-55 ~ +110
°C
Storage Temperature
Tstg
-55 ~ +150
°C
Tsol
260
°C
Tj
125
°C
INPUT
OUTPUT
Total Power Dissipation
*1 Isolation Voltage
*2 Soldering Temperature
Junction Temperature
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : LTV-356T-V
BNS-OD-C131/A4
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ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER
CONDITIONS
Forward Voltage
VF
—
1.2
1.4
V
IF=20mA
Reverse Current
IR
—
—
10
µA
VR=4V
Terminal Capacitance
Ct
—
30
250
pF
V=0, f=1KHz
Collector Dark Current
ICEO
—
—
100
nA
VCE=20V, IF=0
Collector-Emitter
Breakdown Voltage
BVCEO
80
—
—
V
IC=0.1mA
IF=0
Emitter-Collector
Breakdown Voltage
BVECO
6
—
—
V
IE=10µA
IF=0
IC
2.5
—
30
mA
*1 Current Transfer Ratio
CTR
50
—
600
%
Collector-Emitter
Saturation Voltage
VCE(sat)
—
—
0.2
V
IF=20mA
IC=1mA
Isolation Resistance
Riso
—
Ω
DC500V
40 ~ 60% R.H.
Floating Capacitance
Cf
—
0.6
1
pF
V=0, f=1MHz
Response Time (Rise)
tr
—
4
18
µs
Response Time (Fall)
tf
—
3
18
µs
INPUT
OUTPUT
Collector Current
TRANSFER
CHARACTERISTICS
*1 CTR =
SYMBOL MIN. TYP. MAX. UNIT
5×1010 1×1011
IF=5mA
VCE=5V
VCE=2V, IC=2mA
RL=100Ω
IC
× 100%
IF
Part No. : LTV-356T-V
BNS-OD-C131/A4
Page :
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RANK TABLE OF CURRENT TRANSFER RATIO CTR
MODEL NO.
LTV-356T-V
RANK MARK
CTR ( % )
A
80 ~ 160
B
130 ~ 260
C
200 ~ 400
D
300 ~ 600
A or B or C or D or No mark
50 ~ 600
IF = 5 mA
CONDITIONS
VCE = 5 V
Ta = 25 °C
Part No. : LTV-356T-V
BNS-OD-C131/A4
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ISOLATION SPECIFICATION ACCORDING TO VDE 0884
Parameter
Symbol
Conditions
Rating
Unit
30/100/21
-
2
-
-
565
VPEAK
tp=60s, qc<5pC
848
VPEAK
tp=1s, qc<5pC
1059
VPEAK
tINI = 10s
6000
VPEAK
Class of environmental test
-
DIN IEC68
Pollution
-
DIN VDE0110
Maximum Operating
Isolation Voltage
Partial Discharge
Diagram 1
Test Voltage
(Between Input and
Diagram 2
Output)
Maximum Over-voltage
VIORM
Vpr
VINITIAL
Remark
Refer to the
Diagram 1, 2
Safety Maximum Ratings
o
1) Case Temperature
Tsi
IF = 0, Pc = 0
150
2) Input Current
Isi
Pc=0
200
mA
3) Electric Power (Output or
Total Power Issipation)
Psi
-
300
mW
Isolation Resistance
(Test Voltage Between
Input and Output : DC500V)
RISO
Ta=Tsi
MIN.109
Ta=Topr(MAX.)
MIN.1011
Ta=25 oC
MIN.1012
C
Refer to the
Figure 1, 3
Ω
Precautions in performing isolation test
* Partial discharge test methods shall be the ones according to the specifications of
VDE 0884:1992-06
* Please don't carry out isolation test (Viso) over VINITIAL ,This product deteriorates
isolation characteristics by partial discharge due to applying high voltage
(ex. VINITIAL ). And there is possibility that this product occurs partial discharge in
operating isolation voltage (VIORM)
Part No. : LTV-356T-V
BNS-OD-C131/A4
Page : 7 of
13
LITE- O N TECH NO LO G Y CO RP O RATIO N
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PARTIAL DISCHARGE TEST METHOD
Method (A) for type testing and random testing.
V
VINTIAL
Vpr
VIORM
tp
tb
t3
t1 tini t2
t4
t1, t2
= 1 to 10s
t3, t4
= 1s
tp (Partial Discharge Measuring Time)= 60s
tb
= 62s
tini
= 10s
t
Method (B) for routine testing.
V
Vpr
VIORM
t3
tp
tb
t4
t3, t4
= 0.1s
tp (Partial Discharge Measuring Time)= 1s
tb
= 1.2s
t
The partial discharge level shall not exceed 5 pC during the partial discharge measuring time
interval tp under the test conditions shown above.
Part No. : LTV-356T-V
BNS-OD-C131/A4
Page :
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CHARACTERISTICS CURVES
Fig.1
Forword Current
Current
Fig.1 Forword
Temperatute
vs. Ambient Temperatute
Fig.2Collector
CollectorPower
PowerDissiption
Dissiption
Fig.2
vs.Ambient
AmbientTemperature
Temperature
vs.
Collector Power
dissipation Pc
Power dissipation
Collector
Pc (mW)
(mW)
60
60
Forward current IIFF(mA)
(mA)
50
40
30
20
10
0
-30
-55
00
25
25
50
75
100
100 125
125
200
200
150
150
100
100
50
50
00
-30
-55
oo
7mA
o
o
4
3
2
Ta= 75 C
50 C
o
200
o
25 C
0C
-25 C
o
100
o
50
20
10
5
1
2
1
0
5
15
10
0
0.5
Forward current I F(mA)
1.0
1.5
2.0
2.5
3.0
Forward voltage VF(V)
Fig.5 Current Transfer Ratio vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
200
50
VCE= 5V
Ta= 25 C
180
I F= 30mA
160
140
120
100
80
60
40
o
Ta= 25 C
25mA
o
Collector current Ic (mA)
Current transfer ratio CTR (%)
75
75 100
100 125
125
500
O
Ta= 25 C
0
40
20mA
30
15mA
Pc(MAX.)
20
10mA
10
5mA
20
0
0
1
2
5
10
20
Forward current I F(mA)
Part No. : LTV-356T-V
BNS-OD-C131/A4
50
50
Fig.4 Forward Current vs. Forward
Voltage
Forward current I F(mA)
1mA
3mA
5mA
Ic= 0.5mA
Collecotr-emitter saturation voltage
VCE (sat) (V)
5
25
25
Ambient
Ambienttemperature
temperatureTaTa( C)
( C)
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
6
00
o
Ambient temperature
temperature Ta
Ta (( C)
C)
50
0
1
2
3
4
5
6
7
8
9
Collector-emitter voltage VCE(V)
Page : 99 of 13
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CHARACTERISTICS CURVES
Relative current transfer ratio (%)
Relative current transfer ratio (%)
150
150
Fig.8
Collector-emitterSaturation
SaturationVoltage
Voltage
Fig.8
Collector-emitter
vs.
Ambient
Temperature
vs. Ambient Temperature
I F= 5mA
IF= 5mA
VCE= 2V
VCE= 2V
100
100
0.10
0.10
Collector-emitter saturation voltage
VCE (sat) (V)
Collector-emitter
saturation voltage
VCE (sat) (V)
Fig.7 Relative Current Transfer Ratio
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
vs. Ambient Temperature
20mA
I FI=F=20mA
1mA
I CI=C=1mA
0.08
0.08
0.06
0.06
0.04
0.04
50
50
0.02
0.02
0
0 20
20
40
60
80
40
80 Ta 100
Ambient60
temperature
( C)
0 0
20 20
100
4040
80
80
6060
100
100
o o
o
Ambient
temperatureTa
Ta( (C)
C)
Ambient
temperature
o
Ambient temperature Ta ( C)
Fig.9 Collector Dark Current vs.
Ambient Temperature
Collector dark current ICEO (nA)
10000
Fig.10 Response Time vs. Load
Resistance
500
VCE= 20V
Response time ( s)
1000
100
10
200
100
VCE= 2V
IC= 2mA
Ta= 25 C
o
50
tr
20
10
td
tf
5
ts
2
1
0.5
0.2
0.05
1
20
40
60
80
100
o
0.1 0.2
Fig.11 Frequency Response
1
2
5
VCE= 2V
I C= 2mA
Ta= 25 C
o
0
Input
RD
RL
Input
Output
Output
10%
90%
ts
td
100Ω
10
RL= 10kΩ
10
Test Circuit for Response Time
Vcc
Voltage gain Av (dB)
0.5
Load resistance RL (k )
Ambient temperature Ta ( C)
1kΩ
tr
tf
Test Circuit for Frequency Response
Vcc
20
0.5 1
RD
2
5 10 20
50 100
RL
Output
500
Frequency f (kHz)
Part No. : LTV-356T-V
BNS-OD-C131/A4
Page : 10
of 13
LITE- O N TECH NO LO G Y CO RP O RATIO N
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TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time
profile shown below.
Part No. : LTV-356T-V
BNS-OD-C131/A4
Page : 11 of 13
LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
TEMPERATURE PROFILE OF SOLDERING REFLOW
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1)
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
Part No. : LTV-356T-V
BNS-OD-C131/A4
Page : 12 of 13
LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
Notes:
- Lite-On is continually improving the quality, reliability, function or design and
Lite-On reserves the right to make changes without further notices.
- The products shown in this publication are designed for the general use in electronic
applications such as office automation equipment, communications devices,
audio/visual equipment, electrical application and instrumentation.
- For equipment/devices where high reliability or safety is required, such as space
applications, nuclear power control equipment, medical equipment, etc, please
contact our sales representatives.
- When requiring a device for any ”specific” application, please contact our sales in
advice.
- If there are any questions about the contents of this publication, please contact us at
your convenience.
- The contents described herein are subject to change without prior notice.
Do not immerse unit’s body in solder paste.
Part No. : LTV-357T-P (FOR POWER ONLY)
BNS-OD-C131/A4
Page : 13 of 13