LITEON LTV-358T-V

LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
FEATURES
* This specification shall be applied to photocoupler. Model No. LTV-358T as an option.
* Current transfer ratio ( CTR : MIN. 80% at IF = 5mA, VCE = 5V )
* Isolation voltage between input and output LTV-358T-V ( Viso = 3,750Vrms )
* High collector-emitter voltage ( VCEO = 120V )
* Employs double transfer mold technology
* Subminiature type
( The volume is smaller than that of conventional DIP type by as far as 30% )
* Mini-flat package :
2.0mm profile : LTV-358T-V
* UL approved ( No. E113898 )
* CUL approved ( No. E113898 , 01SC19287 )
* CSA approved ( No. 1243207 )
* FIMKO approved ( No. FI-16420 )
* NEMKO approved ( No. P01100403 )
* DEMKO approved ( No. 310475-01 )
* SEMKO approved ( No. 0109173 / 01-08 )
* VDE approved ( No. 094722 )
* RoHS compliance
APPLICATIONS
* Hybrid substrates that require high density mounting.
* Programmable controllers
Part No. : LTV-358T-V
BNS-OD-C131/A4
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LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-358T-V :
2.54±0.25
Pin No. and Internal
connection diagram
Date Code *1
3
4.40±0.2
4
VDE 0884
IDENTIFICATION
FACTORY CODE. *2
BIN NO. *3
2
3. Emitter
4. Collector
5.30±0.3
0.10±0.1
2.00±0.2
0.2±0.05
3.85±0.3
1
1. Anode
2. Cathode
0.40±0.1
7.00+0.2
-0.7
*1. 2-digit date code.
*2. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
*3. Rank shall be or shall not be marked.
Part No. : LTV-358T-V
BNS-OD-C131/A4
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LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
TAPING DIMENSIONS
Description
Tape wide
Pitch of sprocket holes
Distance of compartment
Distance of compartment to compartment
Part No. : LTV-358T-V
BNS-OD-C131/A4
Symbol
W
P0
F
P2
P1
Dimensions in mm ( inches )
12 ± 0.3 ( .47 )
4 ± 0.1 ( .15 )
5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
8 ± 0.1 ( .315 )
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LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER
SYMBOL
RATING
UNIT
Forward Current
IF
50
mA
Reverse Voltage
VR
6
V
Power Dissipation
P
70
mW
Collector - Emitter Voltage
VCEO
120
V
Emitter - Collector Voltage
VECO
6
V
Collector Current
IC
50
mA
Collector Power Dissipation
PC
150
mW
Ptot
170
mW
Viso
3,750
Vrms
Operating Temperature
Topr
-55 ~ +100
°C
Storage Temperature
Tstg
-55 ~ +150
°C
Tsol
260
°C
INPUT
OUTPUT
Total Power Dissipation
*1 Isolation Voltage
*2 Soldering Temperature
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : LTV-358T-V
BNS-OD-C131/A4
Page :
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LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER
CONDITIONS
Forward Voltage
VF
—
1.2
1.4
V
IF=20mA
Reverse Current
IR
—
—
10
µA
VR=4V
Terminal Capacitance
Ct
—
30
250
pF
V=0, f=1KHz
Collector Dark Current
ICEO
—
—
100
nA
VCE=40V, IF=0
Collector-Emitter
Breakdown Voltage
BVCEO
120
—
—
V
IC=0.1mA
IF=0
Emitter-Collector
Breakdown Voltage
BVECO
6
—
—
V
IE=10µA
IF=0
IC
4
—
20
mA
CTR
80
—
400
%
IC
0.2
—
—
mA
*1 Current Transfer Ratio
CTR
20
—
—
%
Collector-Emitter
Saturation Voltage
VCE(sat)
—
—
0.2
V
IF=20mA
IC=1mA
Isolation Resistance
Riso
—
Ω
DC500V
40 ~ 60% R.H.
Floating Capacitance
Cf
—
0.6
1
pF
V=0, f=1MHz
Response Time (Rise)
tr
—
4
18
µs
Response Time (Fall)
tf
—
3
18
µs
INPUT
OUTPUT
Collector Current
*1 Current Transfer Ratio
Collector Current
TRANSFER
CHARACTERISTICS
*1 CTR =
SYMBOL MIN. TYP. MAX. UNIT
5×1010 1×1011
IF=5mA
VCE=5V
IF=1mA
VCE=5V
VCE=2V, IC=2mA
RL=100Ω
IC
× 100%
IF
Part No. : LTV-358T-V
BNS-OD-C131/A4
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LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
RANK TABLE OF CURRENT TRANSFER RATIO CTR
MODEL NO.
RANK MARK
CTR ( % )
CTR ( % )
A
80 ~ 160
>20
B
130 ~ 260
>45
C
200 ~ 400
>70
A or B or C or No Rank
80 ~ 400
>20
LTV-358T-V
CONDITIONS
Part No. : LTV-358T-V
BNS-OD-C131/A4
IF = 5 mA
VCE = 5 V
Ta = 25 °C
IF = 1 mA
VCE = 5 V
Ta = 25 °C
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LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
ISOLATION SPECIFICATION ACCORDING TO VDE 0884
Parameter
Symbol
Conditions
Rating
Unit
30/100/21
-
2
-
-
565
VPEAK
tp=60s, qc<5pC
848
VPEAK
tp=1s, qc<5pC
1059
VPEAK
tINI = 10s
6000
VPEAK
Class of environmental test
-
DIN IEC68
Pollution
-
DIN VDE0110
Maximum Operating
Isolation Voltage
Partial Discharge
Diagram 1
Test Voltage
(Between Input and
Diagram 2
Output)
Maximum Over-voltage
VIORM
Vpr
VINITIAL
Remark
Refer to the
Diagram 1, 2
Safety Maximum Ratings
o
1) Case Temperature
Tsi
IF = 0, Pc = 0
150
2) Input Current
Isi
Pc=0
200
mA
3) Electric Power (Output or
Total Power Issipation)
Psi
-
300
mW
Isolation Resistance
(Test Voltage Between
Input and Output : DC500V)
RISO
Ta=Tsi
MIN.109
Ta=Topr(MAX.)
MIN.1011
Ta=25 oC
MIN.1012
C
Refer to the
Figure 1, 3
Ω
Precautions in performing isolation test
* Partial discharge test methods shall be the ones according to the specifications of
VDE 0884:1992-06
* Please don't carry out isolation test (Viso) over VINITIAL ,This product deteriorates
isolation characteristics by partial discharge due to applying high voltage
(ex. VINITIAL ). And there is possibility that this product occurs partial discharge in
operating isolation voltage (VIORM)
Part No. : LTV-358T-V
BNS-OD-C131/A4
Page : 7 of
12
LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
PARTIAL DISCHARGE TEST METHOD
Method (A) for type testing and random testing.
V
VINTIAL
Vpr
VIORM
tp
tb
t3
t1 tini t2
t4
t1, t2
= 1 to 10s
t3, t4
= 1s
tp (Partial Discharge Measuring Time)= 60s
tb
= 62s
tini
= 10s
t
Method (B) for routine testing.
V
Vpr
VIORM
t3
tp
tb
t4
t3, t4
= 0.1s
tp (Partial Discharge Measuring Time)= 1s
tb
= 1.2s
t
The partial discharge level shall not exceed 5 pC during the partial discharge measuring time
interval tp under the test conditions shown above.
Part No. : LTV-358T-V
BNS-OD-C131/A4
Page :
8 of 12
LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forword Current
vs. Ambient Temperatute
Fig.2 Collector Power Dissiption
vs. Ambient Temperature
Collector Power dissipation Pc (mW)
60
Forward current I F (mA)
50
40
30
20
10
0
-55
0
25
50
75
100
125
200
150
100
50
0
-55
o
7mA
100
125
o
4
3
2
1
Ta= 75 C
50 C
o
200
o
25 C
0C
-25 C
o
100
o
50
20
10
5
2
1
0
5
10
15
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward voltage VF (V)
Forward current I F (mA)
Fig.5 Current Transfer Ratio vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
200
50
VCE= 5V
Ta= 25 C
180
I F= 30mA
160
140
120
100
80
60
40
o
Ta= 25 C
25mA
o
Collector current Ic (mA)
Current transfer ratio CTR (%)
75
500
O
Ta= 25 C
0
40
20mA
30
15mA
Pc(MAX.)
20
10mA
10
5mA
20
0
0
1
2
5
10
20
Forward current I F (mA)
Part No. : LTV-358T-V
BNS-OD-C131/A4
50
Fig.4 Forward Current vs. Forward
Voltage
Forward current I F (mA)
1mA
3mA
5mA
Ic= 0.5mA
Collecotr-emitter saturation voltage
VCE(sat) (V)
5
25
Ambient temperature Ta ( C)
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
6
0
o
Ambient temperature Ta ( C)
50
0
1
2
3
4
5
6
7
8
9
Collector-emitter voltage VCE (V)
Page :
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LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
I F= 5mA
VCE= 5V
100
50
0.10
Collector-emitter saturation voltage
VCE (sat) (V)
Relative current transfer ratio (%)
150
I F= 20mA
I C= 1mA
0.08
0.06
0.04
0.02
0
0
20
40
60
80
20
100
40
o
Collector dark current ICEO (nA)
100
Fig.10 Response Time vs. Load
Resistance
500
VCE= 20V
Response time ( s)
1000
100
10
200
100
VCE= 2V
I C= 2mA
Ta= 25 C
o
50
tr
20
10
td
tf
5
ts
2
1
0.5
0.2
0.05
1
20
40
60
80
100
o
0.1 0.2
0.5
1
2
5
Test Circuit for Response Time
Fig.11 Frequency Response
Vcc
VCE= 2V
I C= 2mA
Ta= 25 C
o
0
Input
RD
RL
Input
Output
Output
10%
90%
ts
td
100
10
RL= 10k
10
Load resistance RL (k )
Ambient temperature Ta ( C)
Voltage gain Av (dB)
80
Ambient temperature Ta ( C)
Fig.9 Collector Dark Current vs.
Ambient Temperature
10000
60
o
Ambient temperature Ta ( C)
tr
tf
1k
Test Circuit for Frequency Response
Vcc
20
0.5 1
RD
2
5 10 20
50 100
RL
Output
500
Frequency f (kHz)
Part No. : LTV-358T-V
BNS-OD-C131/A4
Page : 10 of 12
LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
Temperature Profile of Soldering Reflow
(1) One time soldering reflow is recommended within the condition of temperature and time
profile shown below.
Part No. : LTV-358T-V
BNS-OD-C131/A4
Page : 11 of 12
LITE- O N TECH NO LO G Y CO RP O RATIO N
Property of LITE-ON Only
Temperature Profile of Soldering Reflow
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1)
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
Part No. : LTV-358T-V
BNS-OD-C131/A4
Page : 12 of 12