LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBT6517LT1 3 COLLECTOR 1 BASE 3 2 1 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage V 5.0 Vdc EBO Base Current IB 250 mAdc Collector Current — Continuous IC 500 mAdc SOT–23 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA PD 1.8 556 300 mW/°C °C/W mW RθJA TJ , Tstg 2.4 417 –55 to +150 mW/°C °C/W °C DEVICE MARKING LMBT6517LT1 = 1Z ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 350 — Vdc V (BR)CBO 350 — Vdc V 6.0 — Vdc I CBO — 50 nAdc I EBO — 50 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc ) Collector–Base Breakdown Voltage (I C = 100 µAdc ) Emitter–Base Breakdown Voltage (I E = 10 µAdc ) Collector Cutoff Current ( V CB = 250Vdc ) Emitter Cutoff Current ( V EB = 5.0Vdc ) (BR)EBO 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. LMBT6517–1/6 LESHAN RADIO COMPANY, LTD. LMBT6517LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 20 30 30 20 15 — — 200 200 — — — — — 0.30 0.35 0.50 1.0 — — — 0.75 0.85 0.90 — 2.0 Vdc 40 200 MHz — 6.0 pF — 80 pF ON CHARACTERISTICS DC Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10mAdc, V CE = 10 Vdc) (I C = 30 mAdc, V CE = 10 Vdc) (I C = 50 mAdc, V CE = 10 Vdc) (I C = 100 mAdc, V CE = 10 Vdc) Collector–Emitter Saturation Voltage(3) (I C = 10mAdc, I B = 1.0mAdc) (I C = 20 mAdc, I B = 2.0 mAdc) (I C = 30 mAdc, I B = 3.0mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) Base – Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc,) (I C = 20mAdc, I B = 2.0mAdc,) (I C = 30mAdc, I B = 3.0mAdc,) Base–Emitter On Voltage (I C = 100mAdc, V CE = 10Vdc) hFE — VCE(sat) Vdc Vdc VBE(sat) V BE(on) SMALL–SIGNAL CHARACTERISTICS Current Gain–Bandwidth Product fT (V CE = 20 Vdc, I C = 10mAdc, f = 20 MHz) Collector –Base Capacitance C cb (V CB = 20 Vdc, f = 1.0 MHz) Emitter –Base Capacitance C eb (V EB=0.5 Vdc, f = 1.0 MHz) 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. LMBT6517–2/6 LESHAN RADIO COMPANY, LTD. f T, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) LMBT6517LT1 200 T J = 125°C V CE = 10 V h FE , DC CURRENT GAIN 100 25°C 70 50 –55°C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 70 50 T J = 25°C V CE = 20 V 30 f = 20 MHz 20 10 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Current–Gain — Bandwidth Product 1.4 100 1.2 1.0 0.8 V BE(sat) @ I C /I B = 10 0.6 V BE(on) @ V CE = 10 V 0.4 V CE(sat) @ I C /I B = 10 0.2 V CE(sat) @ I C /I B = 5.0 R θV , TEMPERATURE COEFFICIENTS (mV/°C) 2.5 T J = 25°C 0 IC 2.0 IB = 10 1.5 25°C to 125°C 1.0 0.5 R θVC for V CE(sat) 0 –55°C to 25°C –0.5 –1.0 –55°C to 125°C –1.5 R θVC for V BE –2.0 –2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. “On” Voltages Figure 4. Temperature Coefficients 70 100 100 70 T J = 25°C 50 C eb 30 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 100 20 10 7.0 5.0 C cb 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance LMBT6517–3/6 LESHAN RADIO COMPANY, LTD. LMBT6517LT1 10k 1.0k 700 7.0k V CE(off) = 100 V 500 t d @ V BE(off) = 2.0 V 5.0k I C /I B = 5.0 T J = 25°C 300 ts 3.0k 2.0k 200 V CE(off) = 100 V I C /I B = 5.0 t, TIME (ns) t, TIME (ns) tr 100 70 50 30 1.0k tf I B1 = I B2 T J = 25°C 700 500 300 200 20 100 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 6. Turn–On Time Figure 7. Turn–Off Time 70 100 +V CC V CC ADJUSTED FOR V CE(off) = 100 V +10.8 V 2.2 k 50 Ω SAMPLING SCOPE 20 k 50 1.0 k 1/2MSD7000 –9.2 V PULSE WIDTH ~ ~ 100 ms t r , t f < 5.0 ns (ADJUST FOR V (BE)off = 2.0 V) APPROXIMATELY –1.35 V DUTY CYCLE <1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES Figure 8. Switching Time Test Circuit RESISTANCE (NORMALIZED) 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 SINGLE PULSE 0.07 0.05 Z qJC(t) = r(t) • R qJC T J(pk) – T C = P (pk) Z qJC(t) Z qJA(t) = r(t) • R qJA T J(pk) – T A = P (pk) Z qJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 9. Thermal Response LMBT6517–4/6 LESHAN RADIO COMPANY, LTD. LMBT6517LT1 FIGURE A t P PP t PP 1 1/f DUTY CYCLE =t 1 f = t1 tP PEAK PULSE POWER = P P Design Note: Use of Transient Thermal Resistance Data LMBT6517–5/6 LESHAN RADIO COMPANY, LTD. LMBT6517LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LMBT6517-6/6