LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907LT1 MMBT2907ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value 2907 2907A V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc –600 mAdc IC –60 Unit Collector–Emitter Voltage Collector Current — Continuous –40 3 1 2 Vdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA PD 1.8 556 300 mW/°C °C/W mW RθJA TJ , Tstg 2.4 417 –55 to +150 mW/°C °C/W °C DEVICE MARKING MMBT2907LT1 = M2B, MMBT2907ALT1 = 2F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max –40 –60 –60 –5.0 — — — — — –50 — — –0.020 –0.010 — — — –20 –10 –50 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V MMBT2907 MMBT2907A Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0) Collector Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc) Collector Cutoff Current ( V CB = –50Vdc, I E = 0) MMBT2907 MMBT2907A ( V CB = –50Vdc, I E = 0, T A =125°C ) V (BR)CBO V (BR)EBO I CEX I CBO MMBT2907 MMBT2907A Base Current( V CE = –30Vdc, V EB(off)= –0.5Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. Vdc (BR)CEO (I C = –10 mAdc, I B = 0) IB Vdc Vdc nAdc µAdc nAdc O8–1/4 LESHAN RADIO COMPANY, LTD. MMBT2907LT1 MMBT2907ALT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 35 75 50 100 75 100 –– 100 30 50 –– –– –– –– –– –– –– 300 –– –– –– –– –0.4 –1.6 –– –– –1.3 –2.6 200 –– MHz –– 8.0 pF –– 30 pF — — — — — — 45 10 40 30 80 100 ON CHARACTERISTICS DC Current Gain (I C = –0.1mAdc, V CE = –10 Vdc) hFE –– MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A (I C =–1.0mAdc, V CE = –10 Vdc) (I C = –10 mAdc, V CE = –10Vdc) (I C = –150mAdc, V CE =–10 Vdc)(3) (I C = –500mAdc, V CE =–10 Vdc)(3) Collector–Emitter Saturation Voltage(3) (I C = –150mAdc, I B = –15 mAdc) (I C = –500 mAdc, I B = –50 mAdc) Base–Emitter Saturation Voltage(3) (I C = –150mAdc, I B = –15 mAdc) (I C = –500mAdc, I B = –50 mAdc) VCE(sat) V Vdc Vdc BE(sat) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(3),(4) (I C = –50mAdc, V CE= –20Vdc, f = 100MHz) Output Capacitance (V CB = –10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance f T C obo C ibo (V EB = –2.0Vdc, I C = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn–On Time Delay Time Rise Time Fall Time Storage Time Turn–Off Time (V CC = –30 Vdc, I C = –150 mAdc, I B1 = –15 mAdc) t on td tr (V CC = –6.0 Vdc, I C = –150 mAdc,I B1 = I B2 = 15 mAdc) tf ts t off ns ns 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 4. f T is defined as the frequency at which |h f e | extrapolates to unity. INPUT INPUT Z o = 50 Ω Z O= 50 Ω PRF = 150 PPS –30 V PRF = 150 PPS RISE TIME <2.0 ns 200 P.W. <200 ns RISE TIME <2.0 ns P.W. < 200 ns 1.0 k TO OSCILLOSCOPE RISE TIME < 5.0 ns 0 50 –16 V 200 ns Figure 1. Delay and Rise Time Test Circuit +15 V –6.0 V 1.0 k 37 1.0 k TO OSCILLOSCOPE 0 RISE TIME < 5.0 ns 50 –30 V 1N916 200 ns Figure 2. Storage and Fall Time Test Circuit O8–2/4 LESHAN RADIO COMPANY, LTD. MMBT2907LT1 MMBT2907ALT1 TYPICAL CHARACTERISTICS h FE , NORMALIZED CURRENT GAIN 3.0 V CE = –1.0 V V CE = –10 V 2.0 T J = 125°C 25°C 1.0 –55°C 0.7 0.5 0.3 0.2 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 I C , COLLECTOR CURREN (mA) Figure 3. DC Current Gain V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) –1.0 –0.8 I C = –1.0 mA –100 mA –10 mA –500 mA –0.6 –0.4 –0.2 0 –0.005–0.01 –0.02 –0.03 –0.05 –0.7 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 I B , BASE CURRENT (mA) Figure 4. Collector Saturation Region 300 300 200 100 I C /I B = 10 T J = 25°C tr 70 50 30 20 V CC = –30 V I C /I B = 10 100 t, TIME (ns) t, TIME (ns) 200 V CC = –30 V 70 50 I B1 = I B2 T J = 25°C tf 30 20 t ’ s = t s – 1/8 t f t d @ V BE(off) = 0 V 10 10 7.0 7.0 2.0 V 5.0 5.0 3.0 3.0 –5.0–7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 –5.0–7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 I C , COLLECTOR CURRENT I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Turn–Off Time O8–3/4 LESHAN RADIO COMPANY, LTD. MMBT2907LT1 MMBT2907ALT1 TYPICAL SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE V CE = 10 Vdc, T A = 25°C 10 10 8.0 8.0 –50 µA, R S= 2.7 k Ω –100 µA, R S= 1.6 k Ω 4.0 RS=OPTIMUM SOURCE RESISTANCE 2.0 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 4.0 2.0 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) R S, SOURCE RESISTANCE ( Ω ) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 C eb 20 C, CAPACITANCE(pF) I C = –50µA –100 µA –500 µA –1.0 mA 6.0 0 0.01 0.02 10 7.0 C cb 5.0 3.0 2.0 –0.1 NF, NOISE FIGURE (dB) I C = –1.0 mA, R S= 430 Ω –500 µA, R S= 560 Ω 6.0 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 f T , CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f=1.0 kHz –20 –30 50 k 400 300 200 100 80 VCE=–20 V T J= 25°C 60 40 30 20 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product –1.0 +0.5 T J = 25°C COEFFICIENT (mV/ ° C) V, VOLTAGE (VOLTS) 0 V BE(sat) @ I C /I B = 10 –0.8 V BE(on) @ V CE = –10 V –0.6 – 0.4 –0.2 V CE(sat) @ I C /I B = 10 0 –0.1 –0.2 R θVC for V CE(sat) –0.5 – 1.0 –1.5 R θVB for V BE –2.0 –2.5 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients –500 O8–4/4