LS880FT Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 ℃) CONDITIONS ITEM SYMBOL IF=50mA Power Output PO IF=50mA Forward Voltage VF VR=5V Reverse Current IR λp IF=50mA Peak Wavelength Spectral Line Half Width Δλ IF=50mA IF=50mA Half Intensity Beam Angle θ IFP=50mA Rise Time Tr IFP=50mA Fall Time Tf 1MHz ,V=0V Junction Capacitance Cj IF=10mA Temp. Coefficient of PO P/T IF=10mA Temp. Coefficient of VF V/T 120 80 60 40 20 0 SPECTRAL OUTPUT OPTRANS 2 200 150 100 50 3 100 80 60 40 20 0 0 25 50 75 100 125 -90 -60 -30 0 30 60 FORWARD VOLTAGE(V) FORWARD CURRENT(mA) BEAM ANGLE(deg.) THERMAL DERATING CURVE POWER OUTPUT vs TEMPERATURE IF=10mA FORWARD VOLTAGE vs TEMPERATURE IF=10mA 90 100 120 60 40 20 0 780 880 980 WAVELENGTH(nm) To purchase this part contact Marktech Optoelectronics at 800.984.5337 100 80 60 40 20 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) Marktech Optoelectronics www.marktechopto.com 140 1.6 120 1.5 FORWARD VOLTAGE(V) 80 RELATIVE POWER OUTPUT(%) UNIT mA A V mW ℃ ℃ ℃ ℃ FORWARD CURRENT(mA) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) ITEM RATINGS SYMBOL Forward Current (DC) 75 IF Forward Current (Pulse)*1 0.5 IFP Reverse Voltage 5 VR Power Dissipation 120 PD -20 TO 85 Operating Temp. Topr -30 TO 100 Storage Temp. Tstg Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body RELATIVE POWER OUTPUT(%) 120 1 1.8 10 RADIATION PATTERN 0 0 UNIT mW V μA nm nm deg. μS μS pF %/℃ mV/℃ 120 RELATIVE POWER OUTPUT(%) APPLICATIONS ･Optical Switches ･Edge Sensing (Coin Dispenser) 100 MAX 880 60 ±30 1.5 0.8 15 -0.5 -1.5 250 RELATIVE POWER OUTPUT(%) ① Cathode ② Anode Dimensions (Unit:mm) FORWARD CURRENT(mA) ･High-output Power ･Compact (φ2mm) ･High Reliability in Demanding Environments TYP 1.8 1.45 RELATIVE POWER vs FORWARD CURRENT FORWARD I-V CHARACTERISTICS FEATURES MIN 1.0 100 80 60 40 1.4 1.3 1.2 1.1 20 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) 1 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) 2005/7/6 LS880FT