■Applications CMOS NAND Gate And NOR Gate Operating Voltage Range : 2V ~ 5.5V High Speed Operation Palmtops Digital Equipment : tpd = 2.6ns TYP Low Power Consumption : 1µ µA (max) MSOP-8A Package ■Description ■Features ML74WLABSRG comprises of CMOS NAND gate and NOR gate, manufactured using silicon gate CMOS processes. The small quiescent current, which is one of the features of the CMOS logic, gives way to high speed operations which enables LS-TTL. With wave forming buffers connected internally, stabilized output can be achieved as the series offers high noise immunity. As the series is integrated into a mini molded, MSOP-8A package, high density mounting is possible. High Speed Operation : tpd = 2.6ns TYP (Vcc=5V) Operating Voltage Range: 2V ~ 5.5V Low Power Consumption: 1µA (max) Small Package : MSOP-8A ■Pin Configuration ■Function NAND GATE A INPUT B OUTPUT Y H H L L H L H L L H H H A B OUTPUT Y H H L L H L H L L L L H NOR GATE INPUT H=High level L=Low level ■ Absolute Maximum Ratings Ta=-40°C~85°C PARAMETER SYMBOL RATINGS Power Supply Voltage Vcc -0.5 ~ +6.0 Input voltage VIN -0.5 ~ +6.0 Output Voltage VOUT -0.5 ~ Vcc +0.5 Input Diode Current IIK ±20 Output Diode current IOK ±20 Switch Output Current IOUT ±25 Vcc, GND Current ICC, IGND ±50 Power Dissipation (Ta=25°C) Pd 300 Storage Temperature Tstg -65 ~ +150 Note: Voltage is all Ground standardized. UNITS V V V mA mA mA mA mW °C Rev. B, Sep 2005 ■Recommended Operating Conditions PARAMETER SYMBOL CONDITIONS UNITS Supply Voltage Input Voltage Output Voltage Operating Temperature Vcc VIN VOUT Topr V V V °C Input Rise / Fall Time tr, tf 2 ~ 5.5 0 ~ 5.5 0 ~ Vcc -40 ~ +85 0 ~ 200 (Vcc=3.3V) 0 ~ 100 (Vcc=5V) ns ■DC Electrical Characteristics PARAMETER SYMBOL Vcc(V) 2.0 3.0 5.5 2.0 3.0 5.5 2.0 IOH=-50µA 3.0 4.5 VIN=VIH or VIL 3.0 IOH=-4mA 4.5 IOH=-8mA 2.0 IOL=50µA 3.0 VIN=VIH 4.5 3.0 IOL =4mA 4.5 IOL =8mA 0~5.5 VIN=Vcc or GND 5.5 VIN=Vcc or GND, IOUT=0µA VIH Input Voltage VIL VOH Output Voltage VOL Input Current Quiescent Supply Current CONDITIONS IIN Icc MIN 1.5 2.1 3.85 1.9 2.9 4.4 2.58 3.94 -0.1 - Ta=25°°C Ta=-40~85°°C TYP MAX MIN MAX 1.5 2.1 3.85 0.5 0.5 0.9 0.9 1.65 1.65 2.0 1.9 3.0 2.9 4.5 4.4 2.48 3.80 0.1 0.1 0.1 0.1 0.1 0.1 0.36 0.44 0.36 0.44 0.1 -1.0 1.0 1.0 10.0 UNITS V V V V µA µA ■Switching Electrical Characteristics Tr=tf=3ns PARAMETER SYMBOL CL Propagation Delay Time tPHL Input Capacitance Power Dissipation Capacitance CIN Cpd CONDITIONS 3.3 5.0 3.3 50pF 5.0 3.3 15pF 5.0 3.3 50pF 5.0 5.0 VIN=Vcc or GND No Load, f=1MHz 15pF tPLH Vcc(V) Ta=25°°C Ta=-40~85°°C MIN TYP MAX MIN MAX 3.7 7.9 1 9.5 2.7 5.5 1 6.5 5.4 11.4 1 13 3.6 7.5 1 8.5 3.3 7.9 1 9.5 2.5 5.5 1 6.5 4.6 11.4 1 13 7.5 1 8.5 3.5 2 10 1 10 9.3 - UNITS ns ns ns ns pF pF Rev. B, Sep 2005 ■Noise Characteristics (tr=tf=3ns) CONDITIONS MIN Ta=25°°C TYP MAX PARAMETER SYMBOL CL Vcc(V) UNITS Not functioning output maximum dynamic VOL VOLP 50pF 5.0 -- 0.3 0.8 V Not functioning output minimum dynamic VOL VOLV 50pF 5.0 -0.8 -0.3 -- V Minimum dynamic VIH VIHD 50pF 5.0 -- -- 3.5 V Maximum dynamic VIL VILD 50pF 5.0 -- -- 1.5 V ■Typical Application Circuit ■Waveforms Rev. B, Sep 2005 ■Typical Application Circuit ■Waveforms DISCLAIMER: The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Rev. B, Sep 2005