60NT3 Naina Semiconductor emiconductor Ltd. Non Non-isolated Thyristor Module Features • • • • • Low voltage three-phase High surge current of 2500A @ 60Hz Easy construction Non-isolated Mounting base as common anode Voltage Ratings (TC = 25OC unless otherwise specified) Parameter Maximum repetitive peak reverse voltage Maximum non-repetitive peak reverse voltage Maximum repetitive peak off-state voltage Symbol Values Units VRRM 300 V VRSM 360 V VDRM 300 V NT3 Electrical Characteristics (TC = 25OC unless otherwise specified) Parameter Conditions 0 Average on-state current R.M.S. on-state current Single phase, half half-wave, 180 0 conduction @ TC = 116 C On-state surge current half cycle, 50Hz/60Hz, peak value, non-repetitive repetitive 2 I t required for fusing Peak gate power dissipation Average gate power dissipation Peak gate current Peak gate voltage (forward) Peak gate voltage (reverse) Critical rate of rise of on-state current Critical rate of rise of off-state voltage Symbol Values Units IT(AV) IT(RMS) 60 94 A A ITSM 1900 A 2 PGM(AV) IGM VFGM VRGM 14000 10 1 3 10 5 AS W W A V V di/dt 50 A/µs dv/dt 50 V/µs IH 100 mA Symbol Values Units TJ -30 to +150 0 TSTG Rth(JC) -30 to +125 0.35 0 It PGM I0 = 200mA, V0 = ½ VDRM , dIG/dt = 1 A/µs 0 2/3 TJ = 150 C, V0 = VDRM , exponential wave Holding current 2 Thermal & Mechanical Specifications (TC = 25OC unless otherwise specified) Parameter Operating junction temperature range Storage temperature range Thermal resistance, junction to case 1 C C C/W 0 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com Naina Semiconductor emiconductor Ltd. 60NT3 ALL DIMENSIONS IN MM Diode Configuration 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com