NAINA PWB60A40

60NT3
Naina Semiconductor
emiconductor Ltd.
Non
Non-isolated Thyristor Module
Features
•
•
•
•
•
Low voltage three-phase
High surge current of 2500A @ 60Hz
Easy construction
Non-isolated
Mounting base as common anode
Voltage Ratings (TC = 25OC unless otherwise specified)
Parameter
Maximum repetitive peak
reverse voltage
Maximum non-repetitive
peak reverse voltage
Maximum repetitive peak
off-state voltage
Symbol
Values
Units
VRRM
300
V
VRSM
360
V
VDRM
300
V
NT3
Electrical Characteristics (TC = 25OC unless otherwise specified)
Parameter
Conditions
0
Average on-state current
R.M.S. on-state current
Single phase, half
half-wave, 180
0
conduction @ TC = 116 C
On-state surge current
half cycle, 50Hz/60Hz, peak value,
non-repetitive
repetitive
2
I t required for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate current
Peak gate voltage (forward)
Peak gate voltage (reverse)
Critical rate of rise of on-state current
Critical rate of rise of off-state voltage
Symbol
Values
Units
IT(AV)
IT(RMS)
60
94
A
A
ITSM
1900
A
2
PGM(AV)
IGM
VFGM
VRGM
14000
10
1
3
10
5
AS
W
W
A
V
V
di/dt
50
A/µs
dv/dt
50
V/µs
IH
100
mA
Symbol
Values
Units
TJ
-30 to +150
0
TSTG
Rth(JC)
-30 to +125
0.35
0
It
PGM
I0 = 200mA, V0 = ½ VDRM , dIG/dt = 1
A/µs
0
2/3
TJ = 150 C, V0 = VDRM , exponential
wave
Holding current
2
Thermal & Mechanical Specifications (TC = 25OC unless otherwise specified)
Parameter
Operating junction temperature range
Storage temperature range
Thermal resistance, junction to case
1
C
C
C/W
0
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450
4205450 • Fax: 0120-4273653
0120
[email protected] • www.nainasemi.com
Naina Semiconductor
emiconductor Ltd.
60NT3
ALL DIMENSIONS IN MM
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450
4205450 • Fax: 0120-4273653
0120
[email protected] • www.nainasemi.com