BA159 Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 1.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic • • • • Cathode indicated by Polarity band Mounting position: Any Terminals: Finish Tin plated,, Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approx.) DO O-41 Maximum Ratings (TA = 250C unless otherwise specified specified) Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current @ TA = 500C Peak forward surge current (8.3ms) ms) single half sine sine-wave superimposed on rated load Symbol VRRM VRMS VDC IF(AV) BA159 1000 700 1000 1.0 Units V V V A IFSM 30 A Symbol VF BA159 1.2 5.0 50 500 Units V Units 0 C/W Electrical Characteristics (TA = 250C unless otherwise specified) Parameters Maximum DC forward voltage drop @ 1.0A A DC Maximum DC reverse current @ rated DC blocking voltage Maximum reverse recovery time TA = 250C TA = 1000C IR tRR µA ns Thermal and Mechanical Specifications (TA = 250C unless otherwise specified) Parameters Typical thermal resistance, junction to ambient Symbol RθJA Values 65 Operating and Storage temperature range TJ , TStg - 65 6 to + 150 1 0 C D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com Naina Semiconductor emiconductor Ltd. BA159 Dimensions in inches and (millimeters) 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com