16D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Standard Recovery Diodes (Stud Version), 16A FEATURES Glass passivated chips High surge current capability Stud cathode and stud anode version Wide current range Voltage up to 1600V VRRM RoHS compliant TYPICAL APPLICATIONS Battery charges Converters Power supplies Machine tool controls DO-203AA(DO-4) PRODUCT SUMMARY IF(AV) 16A MAJOR RATINGS AND CHARACTERISTICS TEST CONDITIONS PARAMETER 16 A 140 ºC 25 A 350 370 612 558 A 60 HZ 50 HZ 60 HZ Range 200 to 1600 V -65 to 175 ºC TC I F(AV) I F(RMS) 50 HZ I FSM I 2t V RRM UNIT VALUES TJ A 2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 16D( R ) VOLTAGE CODE VRRM,MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM,MAXIMUM NON-REPETITIVE PEAK VOLTAGE V VR(BR),MIMIMUM AVALANCHE VOLTAGE V(1) 02 200 275 - 04 400 500 500 06 600 725 750 08 800 950 950 10 1000 1200 1150 12 1200 1400 1350 16 1600 1800 1750 Note (1) Avalanche version only available from VRRM 400V to 1600V Page 1 of 5 VRRM,MAXIMUM AT TJ=175°C mA 12 16D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION SYMBOL PARAMETER Maximum average forward current at case temperature I F(AV) Maximum RMS forward current I F(RMS) Maximum on-repetitive peak reverse power P R(1) TEST CONDITIONS I FSM non-reptitive surge current 16 140 25 180 ° conduction, half sine wave 10μs square pulse, T J = T J maximum t = 10 ms Maximum peak, one-cycle forward, VALUES t = 8.3 ms t = 10 ms 15 No voltage reapplied 350 295 t = 8.3 ms 100%V RRM reapplied t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms 100%V RRM reapplied 370 Sinusoidal half wave, initial T J = T J maximum UNIT A ºC A K/W A 310 612 558 435 A 2s Maximum l²t for fusing I 2t Maximum l²√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 6125 A 2√s Maximum forward voltage drop V FM l pk = 50 A, T J = 25˚C, t p = 400µs rectangular wave 1.25 V t = 8.3 ms 395 Note (1) Avalanche only for avalanche version, all other parameters the same as 16D THERMAL AND MECHANICAL SPECIFCATIONS SYMBOL PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistace, junction to case TEST CONDITIONS VALUES UNITS TJ - 65 to175 ºC T stg - 65 to 200 R thJC 1.6 DC operation K/W Maximum thermal resistance R thCS case to heatsink Mounting surface, smooth, flat and greased 0.5 1.5 +0 -10% (13) Not lubricated threads Allowable mounting torque +0 1.2 -10% (10) 6 0.21 Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet N·m (lbf · in) N·m (lbf · in) g oz. DO-203AA (DO-4) ΔRthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180˚ 0.31 0.23 120˚ 90˚ 0.38 0.49 0.72 0.40 0.54 0.75 1.20 1.21 60˚ 30˚ Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Page 2 of 5 TEST CONDUCTIONS T J = T J maximum UNITS K/W RoHS RoHS 16D(R)Series SEMICONDUCTOR Nell High Power Products Fig.2 Current Ratings Characteristics Maximum Allowable Case Temperature(˚C) 180 16D(R)Series R thJC (DC)=1.6K/W 170 160 Conduction Angle 150 90° 140 60° 120° 30° 180° 130 0 8 4 12 16 180 16D(R)Series R thJC (DC)=1.6K/W 170 160 Conduction Period 150 90° 140 120° 60° 180° 30° DC 130 20 0 Average Forward Current (A) 10 5 15 25 20 Average Forward Current (A) Fig. 3 Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) 20 180° Rt 120° 90° 60° 16 6K 30° 8K 12 10K RMS Limit hS A /W =4 K/ W -D elt aR /W /W 15K 8 /W 2 0 K /W Conduction Angle 3 0 K /W 4 16D(R)Series Tj = 175°C 0 0 8 4 12 16 20 Average Forward Current (A) 25 75 50 100 Maximum Allowable Ambient Temperature (°C) Fig. 4 Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature(˚C) Fig.1 Current Ratings Characteristics 25 DC 180° Rt 120° 90° 20 6K/ RMS Limit 60° 8K 30° 15 10K hS A= W 4K /W -D elt aR /W /W 1 5 K /W 10 Conduction Period 2 0 K /W 3 0 K /W 5 16D(R)Series Tj = 175°C 0 0 5 10 15 25 20 Average Forward Current (A) Page 3 of 5 30 25 50 75 100 Maximum Allowable Ambient Temperature (°C) 30 RoHS RoHS 16D(R)Series SEMICONDUCTOR Nell High Power Products 325 Fig. 6 Forward Voltage Drop Characterisics 1000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. 300 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 5 Maximum Non-Repetitive Surge Current Initial TJ = 175°C @60 Hz 0.0083 s @50 Hz 0.0100 s 275 250 225 200 175 16D(R)Series 150 125 TJ = 25°C TJ = 175°C 100 10 16D(R)Series 1 1 0 100 10 Maximum Non Repetitive Surge Current Versus Pulse Train Duration Initial TJ = 175°C No Voltage Reapplied Rated V RRM Reapplied 300 275 250 225 200 175 150 16D(R)Series 125 0.01 0.1 1 6 10 Steady State Value RthJC = 1.6K/W (DC Operation) 1 16D(R)Series 0.1 0.001 Pulse Train Duration (S) 0.01 0.1 1 Square Wave Pulse Duration (s) ORDERING INFORMATION TABLE Device code 5 4 Fig.8 Thermal Impedance ZthJC Characteristics Transient Thermal Impedance ZthJC (K/W) Peak Half Sine Wave Forward Current (A) Fig.7 Maximum Non-Repetitive Surge Current 325 3 Instantaneous Forward Voltage (V) Number Of Equal Amplitude Half Cycle current Pulses(N) 350 2 1 16 D R 12 M 1 2 3 4 5 1 - Current rating: Code = IF(AV) 2 - D = Standard recovery device 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 - Voltage code × 100 = VRRM (see Voltage Ratings table) 5 - None = Stud base DO-203AA (DO-4) #10-32 UNF-2A M = Stud base DO-230AA (DO-4) M5× 0.8 (not available for avalanche diodes) Page 4 of 5 10 16D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products 10.6/11.2 (0.41/0.44) 11.6/12.4 (0.45/0.48) Ø8.5/Ø8.9 (Ø0.33/Ø0.35) 3.7/4.3 (0.14/0.16) 10.5/11.5 (0.41/0.45) 9.6/10.1 (0.37/0.39) 20.0/21.0 (0.78/0.82) 5.0/5.6 (0.19/0.22) Ø1.5/Ø1.7 Ø0.05/Ø0.06 10/32” UNF-2A For metric devices: M5× 0.8 Page 5 of 5 0.5/1.0 (0.02/0.04)