RoHS NKD600 Series RoHS SEMICONDUCTOR Nell Semiconductors Standard Diodes, 600 A ( MAGN-A-PAK Power Modules) 3 2 - + ~ 1 SUPER MAGN A-PAK 31.0 44.0 (1.73) 50.0 (1.97) (1.22) 1 3 2 26.0 (0.98) 26.0 (0.98) 28.0 (1.10) 40.0 (1.89) 60.0 (2.36) M10 112.0 (4.41) 124.0 (4.88) 52 (2.05) 149.0 (5.67) All dimensions in millimeters (inches) FEATURES APPLICATIONS • UL approved file E320098 • High surge capability • Rectifying bridge for large motor drives • Rectifying bridge for large UPS • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate • Industrial standard package • Compliant to RoHS www.nellsemi.com Page 1 of 5 RoHS NKD600 Series RoHS SEMICONDUCTOR Nell Semiconductors PRODUCT SUMMARY IF(AV) 600 A Type Modules - Diode, High Voltage MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 600 A 100 °C 942 A 100 °C TC IF(RMS) TC IFSM I2t 50 Hz 19000 60 Hz 20100 50 Hz 1805 60 Hz 1683 A I2√t kA2s 18050 kA2√t VRRM Range 800 to 2000 V TStg, TJ Range - 40 to 150 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 IRRM MAXIMUM AT T J MAXIMUM mA 50 NKD600 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 A Maximum average forward current at case temperature IF(AV) 180 ° conduction, half sine wave 100 °C Maximum RMS forward current lF(RMS) 180 ° conduction, half sine wave at T C = 100 ° C 942 A Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 10 ms 19.0 t = 8.3 ms t = 10 ms No voltage reapplied t = 8.3 ms Sinusoidal half wave, initial TJ = TJ maximum Maximum I2√t for fusing I 2t Maximum I2√t for fusing I2√t t = 0.1ms to 10 ms, no voltage reapplied Maximum forward voltage drop V FM l pk = 1000A, T J = 25 ° C, t p = 10 ms sine pulse t = 10 ms t = 8.3 ms www.nellsemi.com Page 2 of 5 kA 20.1 100 % VRRM reapplied 1805 1683 1319 kA2s 1230 18050 kA2√t 1.45 V RoHS NKD600 Series RoHS SEMICONDUCTOR Nell Semiconductors BLOCKING PARAMETER SYMBOL RMS insulation voltage VINS Maximum peak reverse and off-state leakage current IRRM TEST CONDITIONS VALUES UNITS 3000 V T J = T J maximum, rated V RRM applied 50 mA T J = 25 ° C 50 µA VALUES UNITS - 40 to 150 °C t = 1s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS T J , T Stg Maximum thermal resistance, junction to ca se per junction R thJC Maximum thermal resistance, case to heatsink R th C -hs DC operation K/W 0.02 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. SMAP to heatsink Mounting torque ± 10 % 0.065 busbar to SMAP 6 to 8 Nm 12 to 15 g 1500 Approximate weight Case style See dimensions - link at the end of datashet SUPER MAGN-A-PAK ‘RthJC CONDUCTION CONDUCTION ANGLE TEST CONDITIONS SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.009 0.006 120° 0.011 0.011 90° 0.014 0.015 60° 0.021 0.022 30° 0.037 0.038 UNITS TJ = TJ maximum K/W Note The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC Fig. 1 Current Ratings Characteristics Fig. 2 Current Ratings Characteristics R thJC (DC)= 0.065 K/W 140 130 Conduction Angle 120 110 100 30° 60° 90° 120° 90 180° 80 0 100 200 300 400 500 600 Average Forward Current (A) 700 Maximum Allowable Case Temperature ( C ) Maximum Allowable Case Temperature (C ) 150 150 R thJC (DC)= 0.065 K/W 140 130 120 Conduction Period 110 60° 100 30° 90° 90 120° 180° DC 80 0 200 400 600 800 Average Forward Current (A) 1000 RoHS NKD600 Series RoHS SEMICONDUCTOR Nell Semiconductors Fig. 4 Forward Power Loss Characteristics Maximum Average Forward Power Loss (W ) Maximum Average Forward Power Loss (W) Fig. 3 Forward Power Loss Characteristics 700 180° 120° 90° 60° 30° 600 500 RMS Limit 400 300 Conduction Angle 200 Per Junction TJ = 150°C 100 0 0 100 200 300 400 500 1000 DC 180° 120° 90° 60° 30° 900 800 700 600 500 RMS Limit 400 Conduction Period 300 200 Per Junction 100 TJ = 150°C 0 600 0 200 Average Forward Current (A) Peak Half Sine Wave Forward Current (A) At Any Rated Load Condition And With . Rated V RRM Reapplied Following Surge. lnitial T J = 150 ° C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 14000 12000 10000 8000 6000 Per Junction 4000 1 600 10 Maximum Non Repetitive Surge Current Versus Pulse Train Duration 18000 lnitial T J = 150 ° C No Voltage Reapplied Rated V RRM Reapplied 16000 14000 12000 10000 8000 6000 Per Junction 4000 0.01 100 0.1 Pulse Train Duration (s ) Fig. 7 Forward Power Loss Characteristics 1000 SA = W K/ 2 0.0 W K/ -D ta el 0.2 5K /W 0.3 5K /W 0.5 K /W R VSKD600.. Series Per Junction 4 W K/ 400 R th 6 K/ W 0. 12 K/ W 0.1 6K /W 180° (Sine) 0 0. 0 0. 0. 08 DC 800 200 lnitial T J = 150 ° C 0 0 200 400 1000 20000 Number Of Equal Amplitude Half Cycle Current Pulses ( N ) 600 800 Fig.6 Maximum Non-Repetitive Surge Current 18000 Maximum Total Forward Power Loss (W ) Peak Half Sine Wave Forward Current (A) Fig.5 Maximum Non-Repetitive Surge Current 16000 400 Average Forward Current (A) 600 800 Total RMS Output Current (A) 1000 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C) 1 RoHS NKD600 Series RoHS SEMICONDUCTOR Nell Semiconductors Fig.8 Forward Power Loss Characteristics -D ta el 2 x NKD600.. Series Single Phase Bridge Connected TJ = 150°C R 0.0 8K /W 0.12 K/ W 0.2 K /W 1000 500 /W 1K 0.0 1500 = K/ W 4K /W 0.0 5K /W 0. 0 SA 2000 R th 0. 03 180° (Sine) 180° (Rect) W K/ 2500 02 0. Maximum Total Power Loss (W) 3000 0 0 200 400 600 800 1000 1200 0 Total Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C ) Fig. 9 Forward Power Loss Characteristics R th 4000 SA 0. 02 1500 0.08 R 0.0 5 ta el 2000 -D 2500 W K/ K/ W 0.0 3K /W 120° (Rect) 3000 01 0. 3500 = K/ W K/ W 3 x NKD600.. Series 0.1 2 K/ W Three Phase Bridge 0.2 K/ W Connected TJ = 150°C 1000 500 0 0 300 600 900 1200 1500 1800 0 25 50 75 Fig.10 Thermal lmpedance Z thJC Characteristic 0.1 Per Junction 0.01 Steady State Value: R thJC = 0.065 K/W (DC Operation) 0.001 0.001 0.01 100 125 150 Maximum Allowable Ambient Temperature (C ) Total Output Current (A) Transient Thermal Impedance Z thJC (K/W) Maximum Total Power Loss (W) 4500 0.1 1 10 Square Wave Pulse Duration (s) 100