THYRISTOR MODULE PDT2008 PDH2008 200A / 800V FEATURES OUTLINE DRAWING * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 PDT TYPICAL APPLICATIONS * AC phase control PDH Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:480g Symbol IO(AV) RMS On-State Current IT(RMS) I Squared t 800 960 800 960 Conditions Average Rectified Output Current *1 IFSM I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Unit PDT/PDH2008 VDRM VDSM VRRM VRSM arameter Surge Forward Current Grade 50Hz Half Sine Wave condition Tc=65°C 50 Hz Half Sine Wave,1cycle Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=300mA, diG/dt=0.2A/µs • V V Max Rated Value Unit 200 A 314 A 4000 A 80000 A2s 100 A/µs 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2000 V M6 Screw 2.5 to 3.5 N •m M8 Screw 9.0 to 10.0 Value per 1 Arm Electrical • Thermal Characteristics Characteristics Symbol Peak Off-State Current Peak Reverse Current Peak On-State Voltage IDM IRM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage VGD Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance *1 Value Per 1Arm *1: Value Per Module dv/dt VDM= VDRM, Tj=125°C VRM= VRRM, Tj= 125°C ITM= 600A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 30 30 1.34 300 150 80 5 3 2 0.25 VD=2/3VDRM Tj=125°C 500 Test Conditions ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C tgt Tj=25°C, ITM=IT(RMS) VD=2/3VDRM, IG=300mA td diG/dt=0.2A/µs tr IL Tj=25°C IH Tj=25°C Rth(j-c) Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound tq Unit mA mA V mA V V V/µs 100 µs 6 2 4 100 60 µs µs µs mA 0.23 0.1 °C/W PDT/PDH2008 OUTLINE DRAWING (Dimensions in mm) PDT PDH