QH08TZ600 Qspeed™ Family 600 V, 8 A H-Series PFC Diode Product Summary IF(AVG) VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 8 600 25.5 1.9 0.75 General Description A V nC A This device has the lowest QRR of any 600V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications • Power Factor Correction (PFC) Boost Diode • Motor drive circuits • DC-AC Inverters Pin Assignment NC Features • Low QRR, Low IRRM, Low tRR • High dIF/dt capable (1000A/µs) • Soft recovery C A Benefits A • Increases efficiency • Eliminates need for snubber circuits • Reduces EMI filter component size & count • Enables extremely fast switching C TO-220AC RoHS Compliant Package uses Lead-free plating and Green mold compound. Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter VRRM IF(AVG) IFSM IFSM TJ(MAX) TSTG Peak repetitive reverse voltage Average forward current Non-repetitive peak surge current Non-repetitive peak surge current Maximum junction temperature Storage temperature Lead soldering temperature Isolation voltage (leads-to-tab) Power dissipation VISOL PD Conditions TJ = 150 °C, TC = 95°C 60 Hz, ½ cycle ½ cycle of t=28 µs Sinusoid, TC=25 °C Leads at 1.6 mm from case, 10 sec AC TC = 25 °C Rating Units 600 8 80 350 150 –55 to 150 300 2500 44.6 V A A A °C °C °C V W Rating Units 62 2.8 °C/W °C/W Thermal Resistance Symbol Resistance from: Conditions RθJA RθJC Junction to ambient Junction to case TO-220 TO-220 www.powerint.com January 2011 QH08TZ600 Electrical Specifications at TJ= 25 °C (unless otherwise specified) Symbol Parameter Conditions Min Typ Max Units - 0.5 2.6 2.23 25 250 3.15 - µA mA V V pF DC Characteristics IR Reverse current VF Forward voltage CJ Junction capacitance VR = 600 V, TJ = 25 °C VR = 600 V, TJ = 125 °C IF = 8 A, TJ = 25 °C IF = 8 A, TJ = 150 °C VR = 10 V, 1 MHz Dynamic Characteristics tRR Reverse recovery time dI/dt =200 A/µs VR=400 V, IF=8 A QRR Reverse recovery charge dI/dt =200 A/µs VR=400 V, IF=8 A IRRM Maximum reverse recovery current dI/dt =200 A/µs VR=400 V, IF=8 A S t Softness factor = b dI/dt =200 A/µs VR=400 V, IF=8 A ta TJ=25 °C TJ=125 °C TJ=25 °C TJ =125 °C TJ =25 °C TJ=125 °C TJ =25 °C TJ=125 °C - 11.1 19.5 8.0 25.5 1.14 1.9 0.7 0.75 13.5 1.7 - ns ns nC nC A A Note to component engineers: H-Series diodes employ Schottky technologies in their design and construction. Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups. (For additional details, see Application Note AN-300.) VR D1 DUT L1 tRR IF dIF/dt ta 15V Pulse generator tb + Rg Q1 0 0.1xIRRM IRRM Figure 1. Reverse Recovery Definitions Figure 2. Reverse Recovery Test Circuit 2 www.powerint.com Rev 1.1 01/11 QH08TZ600 Electrical Specifications at TJ= 25 °C (unless otherwise specified) 20 80 18 70 16 60 Tj=125C 14 50 Cj (pF) IF (A) 12 10 8 Tj=25C 40 30 6 20 4 10 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 20 40 60 80 100 120 140 160 180 VR (V) VF (V) Figure 4. Typical Cj vs VR Figure 3. Typical IF vs VF 80 30 70 dIF /dt=1000A/us dIF /dt=200A/us 25 60 20 tR R (ns) Q R R (nC) dIF /dt=500A/us 50 40 30 dIF /dt=500A/us 15 dIF /dt=1000A/us 10 dIF /dt=200A/us 20 5 10 0 0 0 2 4 6 8 10 12 14 16 0 18 2 4 6 8 12 14 16 18 Figure 6. Typical tRR vs IF at TJ = 125 °C Figure 5. Typical QRR vs IF at TJ = 125 °C 16 45 14 40 12 35 30 10 P (W) IF(AV) (A) 10 IF (A) IF (A) 8 25 20 6 15 4 10 2 5 0 0 25 50 75 100 125 o Case Temperature, TC ( C) Figure 7. DC Current Derating Curve 150 25 50 75 100 125 150 o Case Temperature, TC ( C) Figure 8. Power Derating Curve 3 Rev 1.1 01/11 www.powerint.com QH08TZ600 duty cycle=10% 80 duty cycle=30% 70 duty cycle=50% DC IF(PEAK) (A) 60 50 40 30 20 10 0 25 50 75 100 T C(°C) 125 150 Figure 9. IF(PEAK) vs TC, f=70 kHz QH08TZ600 1 D= 0.5 D = 0.3 0.1 D= 0.1 Zth(j-c)/Rth(j-c) D= 0.05 D= 0.02 0.01 D= 0.01 D=0.005 D=0.002 0.001 Single Pulse 0.0001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 t1(sec) Figure 10. Normalized Maximum Transient Thermal Impedance 4 www.powerint.com Rev 1.1 01/11 QH08TZ600 Dimensional Outline Drawings Millimeters Dim MIN MAX A 4.32 4.70 A1 1.14 1.40 A2 2.03 2.79 C 0.34 0.610 D 9.65 10.67 E 2.49 2.59 E1 4.98 5.18 F 0.508 1.016 F1 1.14 1.78 H 14.71 16.51 H1 5.84 6.795 H2 8.40 9.00 H3 3.53 3.96 H4 2.54 3.05 L 12.70 14.22 L1 - 6.35 Mechanical Mounting Method Maximum Torque / Pressure specification Screw through hole in package tab Clamp against package body 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) 12.3 kilogram-force per square centimeter (kgf/cm2) or 175 lbf/in2 Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more details. Ordering Information Part Number Package Packing QH08TZ600 TO-220AC 50 units/tube The information contained in this document is subject to change without notice. 5 Rev 1.1 01/11 www.powerint.com QH08TZ600 Revision 1.0 1.1 Notes Released by Qspeed Converted to Power Integrations Document Date 01/10 01/11 6 www.powerint.com Rev 1.1 01/11 QH08TZ600 For the latest updates, visit our website: www.powerint.com Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. PATENT INFORMATION The products and applications illustrated herein (including transformer construction and circuits external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at www.powerint.com. Power Integrations grants its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm. The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. ©Copyright 2011 Power Integrations, Inc. Power Integrations Worldwide Sales Support Locations WORLD HEADQUARTERS 5245 Hellyer Avenue San Jose, CA 95138, USA. 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