Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay™ Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process SRAM Compatible • Industry Std. 128Kx16 SRAM Pinout • 60 ns Access Time, 110 ns Cycle Time Advanced Features • Software Programmable Block Write Protect Description The FM21L16 is a 128Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. Superior to Battery-backed SRAM Modules • No Battery Concerns • Monolithic Reliability • True Surface Mount Solution, No Rework Steps • Superior for Moisture, Shock, and Vibration Low Power Operation • 2.7V – 3.6V Power Supply • Low Current Mode (5µA) using ZZ pin • Low Active Current (8 mA typ.) Industry Standard Configuration • Industrial Temperature -40° C to +85° C • 44-pin “Green”/RoHS TSOP-II package The device is available in a 400 mil 44-pin TSOP-II surface mount package. Device specifications are guaranteed over industrial temperature range –40°C to +85°C. Pin Configuration In-system operation of the FM21L16 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM21L16 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. The FM21L16 includes a low voltage monitor that blocks access to the memory array when VDD drops below VDD min. The memory is protected against an inadvertent access and data corruption under this condition. The device also features softwarecontrolled write protection. The memory array is divided into 8 uniform blocks, each of which can be individually write protected. This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made. Rev. 2.0 Apr. 2011 Ordering Information FM21L16-60-TG 60 ns access, 44-pin “Green”/RoHS TSOP-II FM21L16-60-TGTR 60 ns access, 44-pin “Green”/RoHS TSOP-II, Tape & Reel Ramtron International Corporation 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 http://www.ramtron.com Page 1 of 15 A(16:0) A(16:2) Block & Row Decoder Address Latch & Write Protect FM21L16 - 128Kx16 FRAM 16K x 16 block 16K x 16 block 16K x 16 block 16K x 16 block 16K x 16 block 16K x 16 block 16K x 16 block 16K x 16 block A(1:0) Column Decoder CE I/O Latch & Bus Driver WE UB, LB 2 DQ(15:0) Control Logic OE ZZ Figure 1. Block Diagram Pin Description Pin Name Type A(16:0) Input /CE Input /WE Input /OE Input /ZZ Input DQ(15:0) /UB I/O Input /LB Input VDD VSS Rev. 2.0 Apr. 2011 Supply Supply Pin Description Address inputs: The 17 address lines select one of 131,072 words in the F-RAM array. The lowest two address lines A(1:0) may be used for page mode read and write operations. Chip Enable input: The device is selected and a new memory access begins when /CE is low and /ZZ is high. The entire address is latched internally on the falling edge of /CE. Subsequent changes to the A(1:0) address inputs allow page mode operation when /CE is low. Write Enable: A write cycle begins when /WE is asserted. The rising edge causes the FM21L16 to write the data on the DQ bus to the F-RAM array. The falling edge of /WE latches a new column address for page mode write cycles. Output Enable: When /OE is low, the FM21L16 drives the data bus when valid read data is available. Deasserting /OE high tri-states the DQ pins. Sleep: When /ZZ is low, the device enters a low power sleep mode for the lowest supply current condition. Since this input is logically AND’d with /CE, /ZZ must be high for normal read/write operation. If unused, tie /ZZ to VDD. Data: 16-bit bi-directional data bus for accessing the F-RAM array. Upper Byte Select: Enables DQ(15:8) pins during reads and writes. These pins are hi-Z if /UB is high. If the user does not perform byte writes and the device is not configured as a 256Kx8, the /UB and /LB pins may be tied to ground. Lower Byte Select: Enables DQ(7:0) pins during reads and writes. These pins are hi-Z if /LB is high. If the user does not perform byte writes and the device is not configured as a 256Kx8, the /UB and /LB pins may be tied to ground. Supply Voltage Ground Page 2 of 15 FM21L16 - 128Kx16 FRAM Functional Truth Table 1,2 /CE /WE A(16:2) X X X H X X H V ↓ L H No Change L H Change L V ↓ L V ↓ L No Change ↓ X X ↑ A(1:0) X X V Change V V V V X /ZZ L H H H H H H H H Operation Sleep Mode Standby/Idle Read Page Mode Read Random Read /CE-Controlled Write /WE-Controlled Write 2 Page Mode Write 3 Starts Precharge Notes: 1) 2) 3) 4) H=Logic High, L=Logic Low, V=Valid Data, X=Don’t Care. /WE-controlled write cycle begins as a Read cycle and A(16:2) is latched then. Addresses A(1:0) must remain stable for at least 10 ns during page mode operation. For write cycles, data-in is latched on the rising edge of /CE or /WE, whichever comes first. Byte Select Truth Table /WE /OE /LB H H X X H H L H L L L X H L L /UB X H L H L L H L Operation Read; Outputs Disabled Read upper byte; Hi-Z lower byte Read lower byte; Hi-Z upper byte Read both bytes Write upper byte; Mask lower byte Write lower byte; Mask upper byte Write both bytes Note: Assumes /CE is low and /ZZ is high for all cases. The /UB and /LB pins may be grounded if 1) the system does not perform byte writes and 2) the device is not configured as a 256Kx8. Figure 2. Simplified Sleep/Standby State Diagram Rev. 2.0 Apr. 2011 Page 3 of 15 FM21L16 - 128Kx16 FRAM Overview The FM21L16 is a wordwide F-RAM memory logically organized as 131,072 x 16 and accessed using an industry standard parallel interface. All data written to the part is immediately nonvolatile with no delay. The device offers page mode operation which provides higher speed access to addresses within a page (row). An access to a different page requires that either /CE transitions low or the upper address A(16:2) changes. Memory Operation Users access 131,072 memory locations, each with 16 data bits through a parallel interface. The F-RAM array is organized as 8 blocks each having 4096 rows. Each row has 4 column locations, which allows fast access in page mode operation. Once an initial address has been latched by the falling edge of /CE, subsequent column locations may be accessed without the need to toggle /CE. When /CE is deasserted high, a precharge operation begins. Writes occur immediately at the end of the access with no delay. The /WE pin must be toggled for each write operation. The write data is stored in the nonvolatile memory array immediately, which is a feature unique to F-RAM called NoDelayTM writes. Read Operation A read operation begins on the falling edge of /CE. The falling edge of /CE causes the address to be latched and starts a memory read cycle if /WE is high. Data becomes available on the bus after the access time has been satisfied. Once the address has been latched and the access completed, a new access to a random location (different row) may begin while /CE is still low. The minimum cycle time for random addresses is tRC. Note that unlike SRAMs, the FM21L16’s /CE-initiated access time is faster than the address cycle time. The FM21L16 will drive the data bus when /OE and at least one of the byte enables (/UB, /LB) is asserted low. The upper data byte is driven when /UB is low, and the lower data byte is driven when /LB is low. If /OE is asserted after the memory access time has been satisfied, the data bus will be driven with valid data. If /OE is asserted prior to completion of the memory access, the data bus will not be driven until valid data is available. This feature minimizes supply current in the system by eliminating transients caused by invalid data being driven onto the bus. When /OE is deasserted high, the data bus will remain in a high-Z state. Write Operation Writes occur in the FM21L16 in the same time interval as reads. The FM21L16 supports both /CERev. 2.0 Apr. 2011 and /WE-controlled write cycles. In both cases, the address A(16:2) is latched on the falling edge of /CE. In a /CE-controlled write, the /WE signal is asserted prior to beginning the memory cycle. That is, /WE is low when /CE falls. In this case, the device begins the memory cycle as a write. The FM21L16 will not drive the data bus regardless of the state of /OE as long as /WE is low. Input data must be valid when /CE is deasserted high. In a /WE-controlled write, the memory cycle begins on the falling edge of /CE. The /WE signal falls some time later. Therefore, the memory cycle begins as a read. The data bus will be driven if /OE is low, however it will hi-Z once /WE is asserted low. The /CE- and /WE-controlled write timing cases are shown in the Electrical Specifications section. Write access to the array begins on the falling edge of /WE after the memory cycle is initiated. The write access terminates on the rising edge of /WE or /CE, whichever comes first. A valid write operation requires the user to meet the access time specification prior to deasserting /WE or /CE. Data setup time indicates the interval during which data cannot change prior to the end of the write access (rising edge of /WE or /CE). Unlike other truly nonvolatile memory technologies, there is no write delay with F-RAM. Since the read and write access times of the underlying memory are the same, the user experiences no delay through the bus. The entire memory operation occurs in a single bus cycle. Data polling, a technique used with EEPROMs to determine if a write is complete, is unnecessary. Page Mode Operation The F-RAM array is organized as 8 blocks each having 4096 rows. Each row has 4 column address locations. Address inputs A(1:0) define the column address to be accessed. An access can start on any column address, and other column locations may be accessed without the need to toggle the /CE pin. For fast access reads, once the first data byte is driven onto the bus, the column address inputs A(1:0) may be changed to a new value. A new data byte is then driven to the DQ pins no later than tAAP, which is less than half the initial read access time. For fast access writes, the first write pulse defines the first write access. While /CE is low, a subsequent write pulse along with a new column address provides a page mode write access. Page 4 of 15 FM21L16 - 128Kx16 FRAM Precharge Operation The precharge operation is an internal condition in which the state of the memory is being prepared for a new access. Precharge is user-initiated by driving the /CE signal high. It must remain high for at least the minimum precharge time tPC. Precharge is also activated by changing the upper addess A(16:2). The current row is first closed prior to accessing the new row. The device automatically detects an upper order address change which starts a precharge operation, the new address is latched, and the new read data is valid within the tAA address access time. Refer to the Read Cycle Timing 1 diagram on page 10. Likewise a similar sequence occurs for write cycles. Refer to the Write Cycle Timing 3 diagram on page 12. The rate at which random addresses can be issued is tRC and tWC, respectively. Sleep Mode The device incorporates a sleep mode of operation which allows the user to achieve the lowest power supply current condition. It enters a low power sleep mode by asserting the /ZZ pin low. Read and write operations must complete prior to the /ZZ pin going low. Once /ZZ is low, all pins are ignored except the /ZZ pin. When /ZZ is deasserted high, there is some time delay (tZZEX) before the user can access the device. If Sleep Mode is not used, the /ZZ pin should be tied to VDD. Software Write Protection The 128Kx16 address space is divided into 8 sectors (blocks) of 16Kx16 each. Each sector can be individually software write-protected and the settings are nonvolatile. A unique address and command sequence invokes the write protection mode. To modify write protection, the system host must issue six read commands, three write commands, and a final read command. The specific sequence of read addresses must be provided in order to access to the write protect mode. Following the read address sequence, the host must write a data byte that specifies the desired protection state of each sector. For confirmation, the system must then write the complement of the protection byte immediately following the protection byte. Any error that occurs including read addresses in the wrong order, issuing a seventh read address, or failing to complement the protection value will leave the write protection unchanged. Rev. 2.0 Apr. 2011 The write protect state machine monitors all addresses, taking no action until this particular read/write sequence occurs. During the address sequence, each read will occur as a valid operation and data from the corresponding addresses will be driven onto the data bus. Any address that occurs out of sequence will cause the software protection state machine to start over. After the address sequence is completed, the next operation must be a write cycle. The data byte contains the write-protect settings. This value will not be written to the memory array, so the address is a don’t-care. Rather it will be held pending the next cycle, which must be a write of the data complement to the protection settings. If the complement is correct, the write protect settings will be adjusted. If not, the process is aborted and the address sequence starts over. The data value written after the correct six addresses will not be entered into memory. The protection data byte consists of 8-bits, each associated with the write protect state of a sector. The data byte must be driven to the lower 8-bits of the data bus, DQ(7:0). Setting a bit to 1 write protects the corresponding sector; a 0 enables writes for that sector. The following table shows the write-protect sectors with the corresponding bit that controls the write-protect setting. Write Protect Sectors – 16K x16 blocks Sector 7 1FFFFh – 1C000h Sector 6 1BFFFh – 18000h Sector 5 17FFFh – 14000h Sector 4 13FFFh – 10000h Sector 3 0FFFFh – 0C000h Sector 2 0BFFFh – 08000h Sector 1 07FFFh – 04000h Sector 0 03FFFh – 00000h The write-protect read address sequence follows: 1. 12555h * 2. 1DAAAh 3. 01333h 4. 0ECCCh 5. 000FFh 6. 1FF00h 7. 1DAAAh 8. 0ECCCh 9. 0FF00h 10. 00000h * If /CE is low entering the sequence, then an address of 00000h must precede 12555h. The address sequence provides a very secure way of modifying the protection. The write-protect sequence has a 1 in 3 x 1032 chance of randomly accessing exactly the 1st six addresses. The odds are further Page 5 of 15 FM21L16 - 128Kx16 FRAM reduced by requiring three more write cycles, one that requires an exact inversion of the data byte. A flow chart of the entire write protect operation is shown in Figure 3. The write-protect settings are nonvolatile. The factory default: all blocks are unprotected. Figure 3. Write-Protect State Machine For example, the following sequence write-protects addresses from 0C000h to 13FFFh (sectors 3 & 4): Read Read Read Read Read Read Write Write Write Read Rev. 2.0 Apr. 2011 Address 12555h 1DAAAh 01333h 0ECCCh 000FFh 1FF00h 1DAAAh 0ECCCh 0FF00h 00000h Data 18h E7h - ; ; ; ; bits 3 & 4 = 1 complement of 18h Data is don’t care return to Normal Operation Page 6 of 15 FM21L16 - 128Kx16 FRAM Figure 4. Sequence to Set Write-Protect Blocks Note: This sequence requires tAS ≥ 10ns and address must be stable while /CE is low. Figure 5. Sequence to Read Write-Protect Settings Note: This sequence requires tAS ≥ 10ns and address must be stable while /CE is low. Rev. 2.0 Apr. 2011 Page 7 of 15 FM21L16 - 128Kx16 FRAM SRAM Drop-In Replacement The FM21L16 has been designed to be a drop-in replacement for standard asynchronous SRAMs. The device does not require /CE to toggle for each new address. /CE may remain low for as long as 10µs. While /CE is low, the device automatically detects address changes and a new access is begun. It also allows page mode operation at speeds up to 33MHz. The user must be sure /CE is not low at powerup or powerdown events. If /CE and /WE are both low during power cycles, data corruption will occur. Figure 6 shows a pullup resistor on /CE which will keep the pin high during power cycles assuming the MCU/MPU pin is tri-stated during the system reset. The pullup resistor value should be chosen to ensure the /CE pin tracks VDD yet a high enough value that the current drawn when /CE is low is not an issue. A 10K ohm resistor draws 330µA when /CE is low and VDD=3.3V. VDD R only during memory accesses. The FM21L16 draws supply current while /CE is low, even if addresses and control signals are static. While /CE is high, the device draws no more than the maximum standby current ISB. The FM21L16 is backward compatible with the 1Mbit FM20L08 and 256Kbit FM18L08 devices. That is, operating the FM21L16 with /CE toggling low on every address is perfectly acceptable. The /UB and /LB byte select pins are active for both read and write cycles. They may be used to allow the device to be wired as a 256Kx8 memory. The upper and lower data bytes can be tied together and controlled with the byte selects. Individual byte enables or the next higher address line A(17) may be available from the system processor. FM21L16 CE MCU/ MPU WE OE A(16:0) DQ Figure 7. FM21L16 Wired as 256Kx8 Figure 6. Use of Pullup Resistor on /CE For applications that require the lowest power consumption, the /CE signal should be active (low) Rev. 2.0 Apr. 2011 Page 8 of 15 FM21L16 - 128Kx16 FRAM Electrical Specifications Absolute Maximum Ratings Symbol Description VDD Power Supply Voltage with respect to VSS VIN Voltage on any signal pin with respect to VSS TSTG TLEAD VESD Storage Temperature Lead Temperature (Soldering, 10 seconds) Electrostatic Discharge Voltage - Human Body Model (JEDEC Std JESD22-A114-F) - Charged Device Model (JEDEC Std JESD22-C101-D) - Machine Model (JEDEC Std JESD22-A115-A) Package Moisture Sensitivity Level Ratings -1.0V to +4.5V -1.0V to +4.5V and VIN < VDD+1V -55°C to +125°C 260° C 2.5kV 800V 200V MSL-3 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. DC Operating Conditions (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Typ Max Units Notes VDD Power Supply 2.7 3.3 3.6 V IDD Power Supply Current 8 12 mA 1 ISB Standby Current 2 @ TA = 25°C 90 150 µA @ TA = 85°C 270 µA IZZ Sleep Mode Current 3 @ TA = 25°C 5 µA @ TA = 85°C 8 µA ILI Input Leakage Current 4 ±1 µA ILO Output Leakage Current 4 ±1 µA VIH Input High Voltage 2.2 VDD + 0.3 V VIL Input Low Voltage -0.3 0.6 V VOH1 Output High Voltage (IOH = -1.0 mA) 2.4 V VOH2 Output High Voltage (IOH = -100 µA) VDD-0.2 V VOL1 Output Low Voltage (IOL = 2.1 mA) 0.4 V VOL2 Output Low Voltage (IOL = 100 µA) 0.2 V Notes 1. VDD = 3.6V, /CE cycling at min. cycle time. All inputs toggling at CMOS levels (0.2V or VDD-0.2V), all DQ pins unloaded. 2. VDD = 3.6V, /CE at VDD, All other pins are static and at CMOS levels (0.2V or VDD-0.2V), /ZZ is high. 3. VDD = 3.6V, /ZZ is low, all other inputs at CMOS levels (0.2V or VDD-0.2V). 4. VIN, VOUT between VDD and VSS. Rev. 2.0 Apr. 2011 Page 9 of 15 FM21L16 - 128Kx16 FRAM Read Cycle AC Parameters (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V unless otherwise specified) Symbol tRC tCE tAA tOH tAAP tOHP tCA tPC tBA tAS tAH tOE tHZ tOHZ tBHZ Parameter Read Cycle Time Chip Enable Access Time Address Access Time Output Hold Time Page Mode Address Access Time Page Mode Output Hold Time Chip Enable Active Time Precharge Time /UB, /LB Access Time Address Setup Time (to /CE low) Address Hold Time (/CE-controlled) Output Enable Access Time Chip Enable to Output High-Z Output Enable High to Output High-Z /UB, /LB High to Output High-Z Min 110 20 5 60 50 0 60 - Max 60 110 25 10,000 20 15 10 10 10 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes 1 1 1 Write Cycle AC Parameters (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V unless otherwise specified) Symbol tWC tCA tCW tPC tPWC tWP tAS tASP tAHP tWLC tBLC tWLA tAWH tDS tDH tWZ tWX tWS tWH Parameter Write Cycle Time Chip Enable Active Time Chip Enable to Write Enable High Precharge Time Page Mode Write Enable Cycle Time Write Enable Pulse Width Address Setup Time (to /CE low) Page Mode Address Setup Time (to /WE low) Page Mode Address Hold Time (to /WE low) Write Enable Low to /CE High /UB, /LB Low to /CE High Write Enable Low to A(16:2) Change A(16:2) Change to Write Enable High Data Input Setup Time Data Input Hold Time Write Enable Low to Output High Z Write Enable High to Output Driven Write Enable to /CE Low Setup Time Write Enable to /CE High Hold Time Min 110 60 60 50 25 16 0 8 15 25 25 25 110 14 0 10 0 0 Max 10,000 10 - Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes 1 1 2 2 Notes 1. This parameter is characterized but not 100% tested. 2. The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. The parameters tWS and tWH are not tested. Capacitance Symbol CI/O CIN CZZ Rev. 2.0 Apr. 2011 (TA = 25° C , f=1 MHz, VDD = 3.3V) Parameter Input/Output Capacitance (DQ) Input Capacitance Input Capacitance of /ZZ pin Min - Max 8 6 8 Units pF pF pF Notes Page 10 of 15 FM21L16 - 128Kx16 FRAM Power Cycle and Sleep Mode Timing (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Max Units Notes tPU Power Up (after VDD min. is reached) to First Access Time 450 µs tPD Last Write (/WE high) to Power Down Time 0 µs tVR VDD Rise Time 50 1,2 µs/V tVF VDD Fall Time 100 1,2 µs/V tZZH /ZZ Active to DQ Hi-Z Time 20 ns tWEZZ Last Write to Sleep Mode Entry Time 0 µs tZZL /ZZ Active Low Time 1 µs tZZEN Sleep Mode Entry Time (/ZZ low to /CE don’t care) 0 µs tZZEX Sleep Mode Exit Time (/ZZ high to 1st access after wakeup) 450 µs Notes 1. Slope measured at any point on VDD waveform. 2. Ramtron cannot test or characterize all VDD power ramp profiles. The behavior of the internal circuits is difficult to predict when VDD is below the level of a transistor threshold voltage. Ramtron strongly recommends that VDD power up faster than 100ms through the range of 0.4V to 1.0V. Data Retention (VDD = 2.7V to 3.6V) Parameter Data Retention AC Test Conditions Input Pulse Levels Input Rise and Fall Times 0 to 3V 3 ns Min 10 Units Years Input and Output Timing Levels Output Load Capacitance Notes 1.5V 30pF Read Cycle Timing 1 (/CE low, /OE low) Read Cycle Timing 2 (/CE-controlled) Rev. 2.0 Apr. 2011 Page 11 of 15 FM21L16 - 128Kx16 FRAM Page Mode Read Cycle Timing Although sequential column addressing is shown, it is not required. Write Cycle Timing 1 (/WE-Controlled) Note: /OE (not shown) is low only to show effect of /WE on DQ pins Write Cycle Timing 2 (/CE-Controlled) tCA tPC CE tAS tBLC A(17:0) tWH WE tWS tDS DQ(15:0) tDH D in UB/LB Rev. 2.0 Apr. 2011 Page 12 of 15 FM21L16 - 128Kx16 FRAM Write Cycle Timing 3 (/CE low) Note: /OE (not shown) is low only to show effect of /WE on DQ pins Page Mode Write Cycle Timing Although sequential column addressing is shown, it is not required. Power Cycle and Sleep Mode Enter/Exit Timing Rev. 2.0 Apr. 2011 Page 13 of 15 FM21L16 - 128Kx16 FRAM Mechanical Drawing 44-pin TSOP-II (Complies with JEDEC Standard MS-024g Var. AC) Recommended PCB Footprint Pin 1 0.45 0.30 18.41 BASIC 0.80 BSC 0.8 0.5 1.50 10.16 BSC 11.96 11.56 12.6 1.20 max 0.15 0.05 0.20 0.12 0.10 mm 0°-8° 0.6 0.4 Note: All dimensions in millimeters. TSOP-II Package Marking Scheme RAMTRON XXXXXXX-S-P LLLLLLL YYWW Legend: XXXXXX= part number, S= speed, P=package LLLLLL= lot code, YY=year, WW=work week Examples: FM21L16, 60ns access time, “Green”/RoHS TSOP-II package, Lot 6340282, Year 2007, Work Week 31 RAMTRON FM21L16-60-TG 6340282 0731 Rev. 2.0 Apr. 2011 Page 14 of 15 FM21L16 - 128Kx16 FRAM Revision History Revision 1.0 1.1 1.2 Date 9/24/2007 12/12/2007 12/22/2009 2.0 4/4/2011 Rev. 2.0 Apr. 2011 Summary Initial release. Added package MSL rating and placeholder for ESD ratings. Lowered IDD limit. Added UB/LB signals to timing diagrams and added timing parameters to AC table. Expanded explanation of precharge operation. Updated lead temperature rating in Abs Max table. Removed VTP spec. Added tape & reel ordering information. Pre-Production status. Added ESD ratings. Modified write-protect flow diagram and added read sequence diagram. Made clarifications to Byte Select truth table. Added max. CE active time. Page 15 of 15