TI LM113H-SMD

LM113QML
LM113QML Reference Diode
Literature Number: SNVS367
LM113QML
Reference Diode
General Description
Features
The LM113 are temperature compensated, low voltage reference diodes. They feature extremely-tight regulation over a
wide range of operating currents in addition to an unusuallylow breakdown voltage and good temperature stability.
The diodes are synthesized using transistors and resistors in
a monolithic integrated circuit. As such, they have the same
low noise and long term stability as modern IC op amps. Further, output voltage of the reference depends only on highlypredictable properties of components in the IC; so they can
be manufactured and supplied to tight tolerances.
■ Low breakdown voltage: 1.220V
■ Dynamic impedance of 0.3Ω from 500 μA to 20 mA
■ Temperature stability typically 1% over−55°C to 125°C
range
■ Tight tolerance: ±5% or ±1%
The characteristics of this reference recommend it for use
in bias-regulation circuitry, in low-voltage power supplies
or in battery powered equipment. The fact that the
breakdown voltage is equal to a physical property of silicon
—the energy-band gap voltage—makes it useful for many
temperature-compensation and temperaturemeasurement functions.
Ordering Information
NS Part Number
LM113H-SMD
LM113-1H-SMD
SMD Part Number
NS Package Number
5962-8671101XA
H02A
2LD Metal Can
Package Description
5962-8671102XA
H02A
2LD Metal Can
LM113-1H-QMLV
5962-9684302VXA
H02A
2LD Metal Can
LM113WG-QMLV
5962-9684301VZA
WG10A
10LD Ceramic SOIC
LM113-1WG-QMLV
5962-9684302VZA
WG10A
10LD Ceramic SOIC
Connection Diagrams
Metal Can Package (H)
20150021
See NS Package Number H02A
© 2010 National Semiconductor Corporation
201500
Ceramic SOIC Package (WG)
20150001
See NS Package Number WG10A
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LM113QML Reference Diode
December 16, 2010
Schematic Diagram
20150020
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2
Absolute Maximum Ratings (Note 1)
Power Dissipation (Note 2)
Reverse Current
Forward Current
Storage Temperature Range
100 mW
50 mA
50 mA
−65°C ≤ TA ≤ +150°C
300°C
+150°C
Lead Temperature (Soldering, 10 seconds)
Maximum Junction Temperature (TJmax)
Operating Temperature Range
−55°C ≤ TA ≤ +125°C
Thermal Resistance
θJA
Metal Can (Still Air)
Metal Can (500LF / Min Air Flow)
Ceramic SOIC (Still Air)
Ceramic SOIC (500LF / Min Air Flow)
440°C/W
TBD
218°C/W
140°C/W
θJC
Metal Can
Ceramic SOIC
Package Weight
Metal Can
Ceramic SOIC
ESD Tolerance (Note 3)
80°C/W
27°C/W
275mg
220mg
4000V
Quality Conformance
Mil-Std-883, Method 5005 - Group A
Subgroup
Description
1
Static tests at
Temp (°C)
+25
2
Static tests at
+125
3
Static tests at
-55
4
Dynamic tests at
+25
5
Dynamic tests at
+125
6
Dynamic tests at
-55
7
Functional tests at
+25
8A
Functional tests at
+125
8B
Functional tests at
-55
9
Switching tests at
+25
10
Switching tests at
+125
11
Switching tests at
-55
12
Settling time at
+25
13
Settling time at
+125
14
Settling time at
-55
3
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LM113 Electrical Characteristics
DC Parameters
Symbol
Parameter
VZR
Zener Voltage
ΔVZR
Delta Zener Voltage
VF
Forward Voltage Drop
RR
Reverse Dynamic Impedance
Conditions
Notes
IR = 1 mA
Subgroups
Min
Max
Unit
1.16
1.28
V
1
1.157 1.283
V
2, 3
0.5mA ≤ IR ≤ 20mA
15
mV
1
0.5mA ≤ IR ≤ 10mA
15
mV
2, 3
IF = 1mA
1.0
V
1, 2, 3
1.0
Ω
4
0.8
Ω
4
Min
Max
Unit
Subgroups
-0.02
0.02
V
1
Min
Max
Unit
Subgroups
IR = 1mA
(Note 4)
IR = 10mA
DC Drift Parameters
Delta Calculations performed on QMLV devices at Group B, Subgroup 5, only.
Symbol
VZR
Parameter
Zener Voltage
Conditions
Notes
IR = 1mA
LM113-1 Electrical Characteristics
DC Parameters
Symbol
Parameter
VZR
Zener Voltage
ΔVZR
Delta Zener Voltage
VF
Forward Voltage Drop
RR
Reverse Dynamic Impedance
Conditions
Notes
IR = 1 mA
1.210 1.232
V
1
1.206 1.234
V
2, 3
0.5mA ≤ IR ≤ 20mA
15
mV
1
0.5mA ≤ IR ≤ 10mA
15
mV
2, 3
IF = 1mA
1.0
V
1, 2, 3
IR = 1mA
1.0
Ω
4
0.8
Ω
4
Min
Max
Unit
Subgroups
-0.02
0.02
V
1
(Note 4)
IR = 10mA
DC Drift Parameters
Delta Calculations performed on QMLV devices at Group B, Subgroup 5, only.
Symbol
VZR
Parameter
Zener Voltage
Conditions
IR = 1mA
Notes
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/
θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Human body model, 1.5KΩ in series with 100pF.
Note 4: Guaranteed parameter, not tested.
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4
Typical Performance Characteristics
Temperature Drift
Reverse Dynamic Impedance
20150007
20150006
Reverse Characteristics
Reverse Characteristics
20150008
20150009
Reverse Dynamic Impedance
Noise Voltage
20150010
20150011
5
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Forward Characteristics
Response Time
20150012
20150013
Maximum Shunt Capacitance
20150014
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6
Typical Applications
Amplifier Biasing for Constant Gain with Temperature
Constant Current Source
20150018
20150017
Thermometer
20150019
Adjust for 0V at 0°C
Adjust for 100 mV/°C
Level Detector for Photodiode
Low Voltage Regulator
20150015
20150016
†Solid tantalum.
7
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Revision History
Released
Revision
12/16/2010
A
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Section
Changes
New release to corporate format
8
2 MDS data sheets converted into one Corp. data
sheet format. MDSs MNLM113-X Rev 1C1 and
MNLM113-1-X Rev. 2A1 will be archived.
Physical Dimensions inches (millimeters) unless otherwise noted
NS Package Number H02A
NS Package Number WG10A
9
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LM113QML Reference Diode
Notes
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