RUICHIPS RU6055L

RU6055L
N-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
• 60V/60A,
RDS (ON) =10mΩ(tpy.)@VGS=10V
• Super High Dense Cell Design
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
TO-252
Applications
• DC-DC Converters and Off-line UPS
• High Speed Power Switching
• High Frequency Circuits
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
60
A
TC=25°C
240
TC=25°C
A
TC=100°C
60
45
TC=25°C
97
W
TC=100°C
48
W
1.55
°C/W
121
mJ
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
RθJC
Maximum Power Dissipation
Thermal Resistance-Junction to Case
①
A
②
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
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RU6055L
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU6055L
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
④
VGS=0V, IDS=250µA
V
60
VDS= 60V, VGS=0V
1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance
VGS= 10V, IDS=30A
10
µA
4
V
±100
nA
10
12
mΩ
0.8
1.2
V
2
3
Diode Characteristics
VSD
④
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=30A, VGS=0V
ISD=30A, dlSD/dt=100A/µs
24
ns
21
nC
1.0
Ω
⑤
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
1840
300
pF
98
12
VDD=40V, RL=30Ω,
IDS=30A, VGEN= 10V,
RG=4.7Ω
Turn-off Fall Time
45
ns
53
31
⑤
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
45
VDS=48V, VGS= 10V,
IDS=30A
11
nC
13
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature.
Limited by TJmax, IAS =22A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
2
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RU6055L
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Thermal Transient Impedance
ID - Drain Current (A)
Normalized Effective Transient
Safe Operation Area
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
Square Wave Pulse Duration (sec)
3
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RU6055L
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
RDS(ON) - On - Resistance (m)
Normalized Threshold Voltage
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
Tj - Junction Temperature (°C)
4
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RU6055L
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
QG - Gate Charge (nC)
5
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RU6055L
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
6
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RU6055L
Ordering and Marking Information
RU6055
Package (Available)
L : TO252
Operating Temperature Range
C : -55 to 175 ºC
Assembly Material
G : Green & Lead Free
Packaging
T : TUBE
TR: Tape & Reel
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
7
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RU6055L
Package Information
TO252-2L
SYMBOL
MM
INCH
MM
SYMBOL
INCH
MIN
MAX
MIN
MAX
A
2.200
2.400
0.087
0.094
L
A1
0.000
0.127
0.000
0.005
L1
b
0.660
0.860
0.026
0.034
L2
C
0.460
0.580
0.018
0.023
L3
D
6.500
6.700
0.256
0.264
L4
0.600
1.000
0.024
0.039
D1
5.100
5.460
0.201
0.215
Φ
1.100
1.300
0.043
0.051
θ
0°
8°
0°
8°
0.000
0.300
0.000
0.012
D2
4.830 REF.
0.190 REF.
E
6.000
6.200
0.236
0.244
h
e
2.186
2.386
0.086
0.094
V
MIN
MAX
MIN
MAX
9.800
10.400
0.386
0.409
2.900 REF.
1.400
1.700
1.600 REF.
5.350 REF.
0.114 REF.
0.055
0.067
0.063REF.
0.211 REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
8
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RU6055L
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
9
www.ruichips.com