RUICHIPS RU40220R

RU40220R
N-Channel Advanced Power MOSFET
Features
Pin Description
· 40V/220A
RDS (ON)=2.3 mΩ(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
TO-220
TO-220F
TO-263
TO-247
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Absolute Maximum Ratings
Symbol
N-Channel MOSFET
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
40
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
175
°C
-55 to 175
°C
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
②
220
V
A
Mounted on Large Heat Sink
IDP
300µs Pulsed Drain Current Tested
ID
Continue Drain Current
PD
Maximum Power Dissipation
TC=25°C
TC=25°C
TC=100°C
①
800
②
220
170
TC=25°C
400
TC=100°C
230
RθJC
Thermal Resistance -Junction to Case
0.45
RθJA
Thermal Resistance-Junction to Ambient
62.5
A
W
°C/W
Drain-Source Avalanche Ratings
EAS
Avalanche Energy ,Single Pulsed
Storage Temperature Range
1400
mJ
-55 to 150
Copyright Ruichips Semiconductor Co., Ltd
Rev. A –APR., 2011
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RU40220R
Electrical Characteristics
(TA=25°C Unless Otherwise Noted)
RU40220R
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
Symbol
IDSS
Zero Gate Voltage Drain Current
VGS=0V, IDS=-250µA
40
V
VDS= 40V, VGS=0V
1
TJ=85°C
VGS(th)
IGSS
RDS(ON)
③
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state Resistance
VGS=10V, IDS=75A
30
2
3
2.3
µA
4
V
±100
nA
3
mΩ
1.2
V
Diode Characteristics
VSD
③
Diode Forward Voltage
ISD=75A, VGS=0V
Reverse Recovery Time
trr
74
ns
148
nC
1.4
Ω
ISD=40A, dlSD/dt=100A/µs
Reverse Recovery Charge
qrr
④
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
480
td(ON)
Turn-on Delay Time
21
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=35V, RL=35Ω,
IDS=1A, VGEN= 10V,
RG=6Ω
Turn-off Fall Time
5750
pF
1400
37
ns
75
115
④
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
154
VDS=30V, VGS= 10V,
IDS=40A
44
218
nC
47
①Pulse width limited by safe operating area.
②Current limited by package( Limitation Current is 75A )
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev.A –APR., 2011
2
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RU40220R
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Thermal Transient Impedance
ID - Drain Current (A)
Normalized Effective Transient
Safe Operation Area
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev.A –APR., 2011
Square Wave Pulse Duration (sec)
3
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RU40220R
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
Normalized Threshold Vlotage
RDS(ON) - On - Resistance (MR)
VDS - Drain-Source Voltage (V)
VGS - Gate - Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev.A –APR., 2011
Tj - Junction Temperature (°C)
4
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RU40220R
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev.A –APR., 2011
QG - Gate Charge (nC)
5
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RU40220R
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev.A –APR., 2011
6
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RU40220R
Ordering and Marking Information
RU40220
Package (Available)
R: TO-220 ;
Operating Temperature Range
C : -55 to 175 ºC
Assembly Material
G : Green & Lead Free Device
Packaging
T : TUBE
TR : Tape & Reel
Copyright Ruichips Semiconductor Co., Ltd
Rev.A –APR., 2011
7
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RU40220R
Package Information
TO-220FB-3L
SYMBOL
MM
INCH
MM
SYMBOL
INCH
MIN
NOM
MAX
MIN
NOM
MAX
A
4.40
4.57
4.70
0.173
0.180
0.185
Øp1
MIN
NOM
MAX
MIN
NOM
MAX
1.40
1.50
1.60
0.055
0.059
A1
1.27
1.30
1.33
0.050
0.051
0.052
e
0.063
A2
2.35
2.40
2.50
0.093
0.094
0.098
e1
b
0.77
-
0.90
0.030
-
0.035
H1
6.40
6.50
6.60
0.252
0.256
0.260
b2
1.23
-
1.36
0.048
-
0.054
L
12.75
-
13.17
0.502
-
0.519
-
-
3.95
-
-
0.156
2.54BSC
0.1BSC
5.08BSC
0.2BSC
C
0.48
0.50
0.52
0.019
0.020
0.021
L1
D
15.40
15.60
15.80
0.606
0.614
0.622
L2
D1
9.00
9.10
9.20
0.354
0.358
0.362
Øp
3.57
3.60
3.63
0.141
0.142
0.143
DEP
0.05
0.10
0.20
0.002
0.004
0.008
Q
2.73
2.80
2.87
0.107
0.110
0.113
E
9.70
9.90
10.10
0.382
0.389
0.398
θ1
5°
7°
9°
5°
7°
9°
E1
-
8.70
-
-
0.343
-
θ2
1°
3°
5°
1°
3°
5°
E2
9.80
10.00
10.20
0.386
0.394
0.401
2.50REF.
0.098REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev.A –APR., 2011
8
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RU40220R
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev.A –APR., 2011
9
www.ruichips.com