RU6080L N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 60V/80A, RDS (ON) =7mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) TO-252 Applications • SMPS • High Speed Power Switching N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current ② V TC=25°C 80 A TC=25°C 310 TC=25°C A TC=100°C 80 65 TC=25°C 125 W TC=100°C 63 W 1.2 °C/W 225 mJ Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ① A ② Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 www.ruichips.com RU6080L Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Test Condition RU6080L Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ④ VGS=0V, IDS=250µA V 60 VDS= 60V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=30A 10 2 µA 4 V ±100 nA 7 8.5 mΩ 0.8 1.2 V 3 Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=30A, VGS=0V ISD=30A, dlSD/dt=100A/µs 38 ns 45 nC 2.0 Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS= 30V, Frequency=1.0MHz 2840 pF 300 140 14 VDD=30V, RL=30Ω, IDS=30A, VGEN= 10V, RG=4.7Ω Turn-off Fall Time 45 ns 54 32 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 55 VDS=48V, VGS= 10V, IDS=30A 11 72 nC 13 Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 60A. Limited by TJmax, IAS =30A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 2 www.ruichips.com RU6080L Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient Safe Operation Area VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU6080L Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU6080L Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU6080L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 6 www.ruichips.com RU6080L Ordering and Marking Information RU6080 Package (Available) L : TO252 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR: Tape & Reel Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 7 www.ruichips.com RU6080L Package Information TO252-2L SYMBOL MM INCH MIN MAX MIN MAX MM SYMBOL A 2.200 2.400 0.087 0.094 L A1 0.000 0.127 0.000 0.005 L1 b 0.660 0.860 0.026 0.034 L2 INCH MIN MAX MIN MAX 9.800 10.400 0.386 0.409 2.900 REF. 1.400 1.700 1.600 REF. 0.114 REF. 0.055 0.067 C 0.460 0.580 0.018 0.023 L3 D 6.500 6.700 0.256 0.264 L4 0.600 1.000 0.024 0.063REF. 0.039 D1 5.100 5.460 0.201 0.215 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° E 6.000 6.200 0.236 0.244 h 0.000 0.300 0.000 0.012 e 2.186 2.386 0.086 0.094 V D2 4.830 REF. 0.190 REF. 5.350 REF. 0.211 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 8 www.ruichips.com RU6080L Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 9 www.ruichips.com