http://www.sanken-ele.co.jp SANKEN ELECTRIC DKG1020 Aug. 2011 Package Features ・Low on-state resistance ・Built-in gate protection diode ・SMD PKG TO252 Applications ・DC / DC converter ・Switching Key Specifications ・V(BR)DSS =100V (ID=100uA) ・R DS(ON)=52 mΩ max. (VGS=10V, ID=10A) ・R DS(ON)=59 mΩ max. (VGS=4.5V, ID=10A) Internal Equivalent Circuit Ｄ(2) Ｇ(1) Ｓ(3) Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rating Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current ID ±20 A Maximum Power Dissipation PD 40 (Tc= 25°C) W Single Pulse Avalanche Energy EAS *1 62. 5 mJ Channel Temperature Tch 150 °C Storage Temperature Tstg -55 t o + 150 °C Maximum Drain to Source dv/dt dv/dt 1*1 0. 6 V/ns Peak diode recovery dv/dt dv/dt 2*2 5 V/ns Peak diode recovery di/dt di/dt*2 100 A/μs *1 VDD=14V, L=1mH, IL=11A, unclamped, See Fig.1 *2 IsD=20A, See Fig.2 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 1 http://www.sanken-ele.co.jp SANKEN ELECTRIC DKG1020 Aug. 2011 Electrical characteristics (Ta=25°C) Symbol Drain to Source breakdown Voltage V(BR)DSS Gate to Source Leakage Current IGSS VGS=±20V ±10 μA Drain to Source Leakage Current IDSS VDS=100V, VGS=0V 100 μA Gate Threshold Voltage VTH VDS=10V, ID=1mA 1.5 2.5 V Forward Transconductance Re(yfs) VDS=10V, IDD=10A 9.0 Static Drain to Source On-Resistance Test Conditions Limits Characteristic ID=100μA,VGS=0V MIN TYP MAX 100 V 2.0 S ID=10A, VGS=10V 41 52 ID=10A, VGS=4.5V 45 59 RDS(ON) mΩ 2200 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 11 0 Turn-On Delay Time td(on) 40 Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Source Charge Qgd Source-Drain Diode Forward Voltage VSD Source-Drain Diode Reverse Recovery Time trr Source-Drain Diode Reverse Recovery Time Qrr Tharmal Resistance Junction to Case Rth(ch-c) VDS=10V VGS=0V f=1MHz ID=10A, VDD=50V RG=20Ω, RL=5Ω VGS=10V See Fig.3 210 pF 140 ns 280 340 47 VDD=50V VGS=10V ID=20V 8 nC 7 ISD=20A,VGS=0V ISD =20A ｄi/dt=100A/μs 0.9 1.2 ns 60 nC 3.125 Page 2 V 50 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Unit °C/W http://www.sanken-ele.co.jp SANKEN ELECTRIC DKG1020 Aug. 2011 Characteristic Curves (Tc=25°C) ID - VGS characteristics (typical) ID - VDS characteristics (typical) VDS=10V 4.5V 20 20 3.5V VGS=10V 3.0V 15 ID (A) ID (A) 15 10 10 Tc=-125℃ 75℃ 5 25℃ 5 0 -30℃ 0 0 0.5 1 1.5 0 1 2 3 5 VGS （V) RDS(ON) - Tc characteristics (typical) RDS(ON) - ID characteristics (typical) ID=10A 100 60 VGS=4.5V 80 40 VGS=4.5V 60 RDS(ON) (mΩ) RDS(ON) (mΩ) 4 VDS （V) 40 10V 20 10V 20 0 0 -75 -50 -25 0 25 50 0 75 100 125 150 Tc (℃) 5 10 15 20 ID (A) Re(yfs) - ID characteristics (typical) VDS - VGS characteristics (typical) VDS=10V 1000 1 100 ID=20A 0.5 Re(yfs) (S) VDS (V) 1.5 10A Tc=-30℃ 25℃ 10 75℃ 125℃ 5A 0 1 0 5 10 15 20 1 10 100 ID （A) VGS (V) The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 3 http://www.sanken-ele.co.jp SANKEN ELECTRIC DKG1020 Aug. 2011 Characteristic Curves (Tc=25°C) Capacitance - VDS characteristics VGS=0V (typical) f=1MHz IDR - VSD characteristics (typical) 10000 20 Ciss 15 IDR (A) Capa (pF) 1000 Coss 100 Tc=125℃ 10 75℃ 25℃ -30℃ 5 Crss 10 0 10 20 30 40 VDS (V) 0 50 0 0.5 1 1.5 VSD （V) TRANSIENT THERMAL RESISTANCE - PULSE WIDTH Single Pulse rth(ch-c) (℃/W) 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 PW (sec) SAFE OPARATING AREA PD-Tc characteristics Tc=25℃ Single Pulse 50 100 With infinite heatsink 40 PT=100us 10 PT=1ms ID (A) ＰＤ (W) 30 20 1 10 0.1 0 0 50 100 150 Tc (℃) 1 10 100 VDS (V) The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 4 1000 http://www.sanken-ele.co.jp SANKEN ELECTRIC DKG1020 Fig.1 Aug. 2011 Unclamped Inductive Test Method EAS= (b) Waveforms (a) Test Circuit Fig.2 1 V(BR)DSS ･L･ILP2・ V(BR)DSS - VDD 2 Diode Reverse Recovery Time Test Method ISD trr di/dt IRM VDD dv/dt 2 V GS 0V VSD (b) Waveforms (a) Test Circuit Fig.3 Switching Time Test Method 90% VGS 10% 90% VDS 10% td(on) Duty cycle≤1% tr ton (a) Test Circuit td(off) tf toff (b) Waveforms The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 5 http://www.sanken-ele.co.jp SANKEN ELECTRIC DKG1020 Aug. 2011 Outline TO252 Pin assignment (1) Gate (2) Drain (3) Source Weight Approx.0.33g The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 6