MOS FET FKV575 November, 2008 ■Package----FM20(TO220 Full Mold) ■Features • High Current Capability (ID:75A (DC)) •Low on-resistance (RDS(on):7mΩ typ) • Avalanche energy guarantee ■Applications • DC-DC Converters • High speed switching ■Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25°C） Characteristic Symbol Rating Unit Drain to Source Voltage VDSS 50 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current ID ±75A A ±200A A 40 (Tc=25°C) W 300 mJ ID(pulse) Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy PD EAS １) ２) Avalanche Current IAS 75 A Channel Temperature Tch 150 °C Storage Temperature Tstg －55 to 150 °C １) PW≤100μs，duty cycle≤１% ２) VDD=20V,L=64μH，ILp=75A,unclamped,RG=50Ω, See Fig.1 . SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp T02-016EA-081114 MOS FET FKV575 November, 2008 Electrical characteristics (Ta=25°C） Unit Symbol Drain to Source breakdown Voltage V(BR)DSS Gate to Source Leakage Current IGSS VGS=±20V ±100 nA Drain to Source Leakage Current IDSS VDS=50V, VGS=0V 100 μA Gate Threshold Voltage VTH VDS=10V, ID=250μA 3.0 4.5 V Forward Transconductance Re(Yfs) VDS=10V, ID=37A 30 Static Drain to Source On-Resistance RDS(on) ID=37A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain Charge Qgd Source-Drain Diode Forward Voltage VSD Test Conditions Limits Characteristic ID=100μA,VGS=0V VDS=10V VGS=0V f=1MHz MIN. TYP. MAX. 50 V S 7 10 mΩ 3200 pF 1800 750 40 ID=37A, VDD≈25V RL=0.7Ω, VGS=10V 280 RG=10Ω 130 ns See Fig.2 120 ID=37A, VDD≈25V RL=0.7Ω, VGS=10V 70 nC 15 30 ISD=75A,VGS=0V 1.0 1.5 V . SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp T02-016EA-081114 MOS FET FKV575 November, 2008 Characteristic Curves ID - VDS characteristics (typical) 200 RDS(ON) - ID characteristics (typical) VGS=10V 14 VGS=12V 12 8V 10 RDS(ON) (mΩ） 10V 9V 150 7V IC(A) (Tc=25℃) 8 6 4 100 2 0 0 50 10 20 30 40 6V 50 60 70 80 ID(A） ID=37A VGS=10V RDS(ON) - TC characteristics (typical) 5V 25 0 0 2 4 6 8 10 VCE(V) RDS(ON) (mΩ) 20 15 10 5 0 -50 0 50 100 150 TC(℃) ID - VGS characteristics (typical) VDS=10V 80 VDS-VGS characteristics (typical) 70 1.5 60 1 40 VDS(V) ID(A） 50 30 20 TC=125℃ ID=75 A 0.5 TC=25℃ 10 37A TC=-40℃ 0 0 2 4 6 VGS(V） 8 10 0 0 2 4 6 8 10 VGS(V) 12 14 16 18 . SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp T02-016EA-081114 20 MOS FET FKV575 November, 2008 Characteristic Curves (Tc=25℃) Capacitance－VDS characteristics (typical) Re(yfs) - ID characteristics (typical) VDS=10V VGS=0V f=1MHz 1000 10000 Tc＝-40℃ 100 Tc＝25℃ Re(yfs)(S） Ciss Tc＝125℃ Capacitance (pF) 10 1 Coss 1000 Crss 0.1 0.1 1 10 ID(A） 100 1000 100 0 IDR-VSD characteristics (typical) 10 20 30 VDS (V) 40 50 200 0V VGS=10 150 SAFE OPERATING AREA ID(pulse) MAX. 100 0 0 0.5 1 1.5 VDS(V) ID [A] 50 1ms (1shot) RDS(on) LIMITED 10ms (1shot) 10 PD － Ta characteristics Tc=25℃ 1 50 With infinite heatsink 40 0.1 ＰＤ (W) ID(A) 1000 100 0.1 30 1 10 VDS [V] 20 10 Without heatsink 0 0 50 100 150 Ta (℃) . SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp T02-016EA-081114 100 MOS FET FKV575 November, 2008 Fig.1 Unclamped Inductive Test Method EAS= L 1 V(BR)DSS ·L·ILP2· 2 V(BR)DSS − VDD V(BR)DSS IL VDS ILp RG VDS VDD VGS IL VDD 0V (a) Test Circuit Fig.2 (b) Waveforms Switching Time Test Method RL VDD≈25V ID=37A RL=0.7Ω VGS=10V RG=5Ω ID VDS RG VDD VGS 0V P.W.=10μs Duty cycle≦1% (a) Test Circuit 90% VGS 10% 90% VDS 10% td(on) tr td(off) ton tf toff (b) Waveforms . SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp T02-016EA-081114 MOS FET FKV575 November, 2008 Outline FM20 (TO220 Full Mold) (1) Gate (2) Drain (Back Side) (1) (2) (3) (3) Source Weight Approx. 2g . SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp T02-016EA-081114 MOS FET FKV575 November, 2008 <Worldwide Contacts> Asia Pacific China Sanken Electric Hong Kong Co., Ltd. Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852-2735-5262 Fax: 852-2735-5494 Sanken Electric (Shanghai) Co., Ltd. Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China Tel: 86-21-5208-1177 Fax: 86-21-5208-1757 India Saket Devices Pvt. Ltd. Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India Tel: 91-20-5621-2340 91-20-2528-5449 Fax: 91-20-2528-5459 Japan Sanken Electric Co., Ltd. Overseas Sales Headquaters Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan Tel: 81-3-3986-6164 Fax: 81-3-3986-8637 Korea Sanken Electric Korea Co., Ltd. Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea Tel: 82-2-714-3700 Fax: 82-2-3272-2145 Singapore Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720 Tel: 65-6291-4755 Fax: 65-6297-1744 Malaysia Sanken Electric Singapore Pte. Ltd. Malaysia Representative Office Block B-20-5, Level 20, Northpoint Midvalley City, No.1, Medan Syed Putra Utara, 59200 Kuala Lumpur, Malaysia TEL:60-3-2284-1769 FAX:60-3-2282-6345 Taiwan Taiwan Sanken Electric Co., Ltd. Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161 Fax: 886-2-2356-8261 . SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp T02-016EA-081114 MOS FET FKV575 November, 2008 Europe United Kingdom Sanken Power Systems (UK) Limited Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK Tel: 44-1656-869-100 Fax: 44-1656-869-162 North America United States Allegro MicroSystems, Inc. 115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A. Tel: 1-508-853-5000 Fax: 1-508-853-3353 Allegro MicroSystems, Inc. (Southern California) 14 Hughes Street, Suite B105, Irvine, CA 92618 Tel: 1-949-460-2003 Fax: 1-949-460-7837 . SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp T02-016EA-081114 MOS FET FKV575 November, 2008 CAUTION / WARNING ●The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. ● Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. ● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. ● When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users’ responsibility. ● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure nd defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. ● Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested. When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. 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