SANKEN SDC03_01

SDC03
NPN Darlington
With built-in avalanche diode
Absolute maximum ratings
External dimensions E
Electrical characteristics
(Ta=25°C)
Symbol
Ratings
Unit
Symbol
VCBO
60±10
V
ICBO
VCEO
60±10
V
IEBO
SD
(Ta=25°C)
Specification
min
typ
max
1.1
•••
Unit
Conditions
10
µA
VCB=50V
3.5
mA
VEB=6V
V
VEBO
6
V
VCEO
50
60
70
IC
1.5
A
hFE
2000
5000
12000
ICP
2.5 (PW≤1ms, Du≤10%)
A
VCE(sat)
1.2
1.4
V
IB
0.1
A
VBE(sat)
1.8
2.2
V
PT
3 (Ta=25°C)
W
VFEC
1.3
1.8
V
IFEC=1A
Tj
150
°C
ton
0.5
µs
VCC 30V,
Tstg
–40 to +150
°C
tstg
4.0
µs
IC=1A,
θ j–a
41.6
°C/W
tf
1.0
µs
IB1=–IB2=2mA
fT
50
MHz
VCE=12V, IE=–0.1A
Cob
25
pF
VCB=10V, f=1MHz
■Equivalent circuit diagram
15,16
1
13,14
11,12
3
5
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=2mA
9,10
7
R1 R2
2
4
6
8
R1: 3.5kΩ typ R2: 200Ω typ
Characteristic curves
IC-VCE Characteristics (Typical)
hFE-IC Characteristics (Typical)
2.5
2m
A
1m
A
IB=10mA
2.0
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
10000
(VCE=4V)
10000
typ
mA
0.6
5000
m
0.4
5000
°C
25
=1 5°C
7
Ta
°C
25 C
0°
–3
A
A
.3m
0
1.0
1000
1000
hFE
hFE
IC (A)
1.5
500
500
100
100
0.5
0
0
1
2
3
4
6
5
50
0.03 0.05
0.1
0.5
VCE (V)
VCE(sat)-IC Temperature Characteristics (Typical)
1
50
0.03 0.05
2.5
0.5
1
2.5
IC (A)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
3
0.1
IC (A)
(VCE=4V)
2.5
3
2.0
–30°C
1
2
IC=2A
1.0
1A
1
1.5
Ta=
125
75°C °C
25°C
–30°C
75°C
25°C
IC (A)
VCE (sat) (A)
VCE (sat) (V)
Ta=125°C
2
0.5A
0.5
0
0.2
0.5
1
0
0.1
2.5
0.5
1
5
10
0
0
50 100
1
θ j-a-PW Characteristics
PT-Ta Characteristics
50
3
2
Safe Operating Area (SOA)
5
4
10
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
0µ
3
S
1m
S
2
10
2
5
1
IC (A)
PT (W)
10
mS
θ j–a (°C / W)
3
VBE (V)
IB (mA)
IC (A)
1
0.5
1
Single Pulse
0.1 Without Heatsink
Ta=25°C
1
1
5
10
50 100
PW (mS)
194
500 1000
0
0
50
100
Ta (°C)
150
0.05
3
5
10
50
VCE (V)
100