SDH02 NPN Darlington With built-in flywheel diode Absolute maximum ratings External dimensions E Electrical characteristics (Ta=25°C) Symbol Ratings Unit Symbol VCBO 120 V ICBO VCEO 100 V IEBO VEBO 6 V VCEO 100 IC 1.5 A hFE 2000 ICP 2.5 (PW≤1ms, Du≤10%) A VCE(sat) 1.1 1.3 V IB 0.2 A VBE(sat) 1.7 2.2 V Unit Conditions 10 µA VCB=120V 3 mA VEB=6V V IC=10mA 12000 VCE=4V, IC=1A IC=1A, IB=2mA IF 1.5 A ton 0.5 VCC 30V, 2.5 (PW≤0.5ms, Du≤10%) µs IFSM A tstg 4.5 µs IC=1A, VR 120 V PT 3 (Ta=25°C) W Tj 150 °C Tstg –40 to +150 °C tf 1.2 µs IB1=–IB2=2mA fT 50 MHz VCE=12V, IE=–0.1A Cob 20 pF VCB=10V, f=1MHz ●Diode for flyback voltage absorption ■Equivalent circuit diagram Specification min typ max Symbol 14 13 16 15 12 11 10 9 VR 3 5 7 R1 R2 4 2 R1: 2.5kΩ typ R2: 200Ω typ 6 IR trr 8 (Ta=25°C) Unit Conditions V IR=10µA 1.6 V IF=1A 10 µA VR=120V ns IF=±100mA 120 VF 1 SD (Ta=25°C) Specification min typ max 6000 ••• 100 Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) (VCE=4V) 10000 2.5 IB=10mA A 4m A 2m mA 1.2 hFE-IC Temperature Characteristics (Typical) (VCE=4V) 10000 typ A 0.6m 5000 5000 A 2.0 0.4m 25 Ta =1 °C 75 °C 25 1.5 °C 0° C –3 hFE hFE IC (A) 0.3mA 1000 1000 1.0 500 500 0.5 0 1 2 3 4 5 6 100 0.03 0.05 0.1 0.5 VCE(sat)-IC Temperature Characteristics (Typical) 100 0.03 0.05 2.5 0.1 0.5 1 2.5 IC (A) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) (IC / IB=1000) 3 1 IC (A) VCE (V) (VCE=4V) 2.5 3 –30°C 25°C 2 IC (A) 1.5 IC=2A 1.0 IC=1A 1 IC=0.5A Ta=125°C 0.5 75°C 0 0.2 0.5 1 0 0.1 2.5 0.5 1 IC (A) 5 10 50 0 0 100 1 θ j-a-PW Characteristics PT-Ta Characteristics 3 2 3 VBE (V) IB (mA) 50 Safe Operating Area (SOA) 5 4 s 0µ s 1m 2 10 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation 3 PT (W) 10 5 IC (A) s m 10 1 2 θ j–a (°C / W) Ta= 125 °C 75°C 25°C –30°C 1 VCE (sat) (V) VCE (sat) (V) 2.0 2 1 0.5 1 0.1 Single Pulse 0.05 Without Heatsink 1 1 5 10 50 100 PW (mS) 166 500 1000 0 0 50 100 Ta (°C) 150 0.03 3 Ta=25°C 5 10 50 VCE (V) 100