SLA5022 Absolute maximum ratings PNP Darlington + N-channel MOSFET Ratings Unit Symbol VM IO IOP VGSS IB 60 ±6 (PW≤100ms) ±10 (PW≤1ms) ±10 –0.5 5 (Ta=25°C) 35 (Tc=25°C) 25 3.57 1000 (Between fin and lead pin, AC) 150 –40 to +150 V A A V A V(BR)DSS IGSS IDSS VTH Re(yfs) W RDS(ON) °C/W °C/W Vrms °C °C Ciss Coss ton toff VSD trr θ j-a θ j-c VISO Tj Tstg ••• SLA (12-pin) Electrical characteristics (Sink : N channel MOSFET) (Ta=25°C) Symbol PT External dimensions A 3-phase motor drive Specification min typ max 60 ±500 250 1.0 2.0 3.1 4.6 0.17 0.22 0.25 0.30 400 160 80 50 1.1 1.5 150 (Ta=25°C) Unit Conditions V nA µA V S ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=30V, VGS=5V ISD=4A, VGS=0V IF=±100mA Ω pF pF ns ns V ns ■Equivalent circuit diagram 1 R1 VM R2 2 8 9 3 7 10 OUT1 OUT2 OUT3 4 6 11 5 R1: 3kΩ typ R2: 80Ω typ 12 Characteristic curves (N-channel) VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) 10 IDS-RDS(ON) Characteristics (Typical) (VDS=10V) 10 0.3 10V 8 8 4V 4 4 TC=–40°C 2 0 0 2 4 6 0.1 25°C VGS=3V 2 0 VGS=10V RDS 3.5V 0.2 (ON) 6 ID (A) ID (A) (Ω) 4V 6 8 10 125°C 0 1 2 3 4 0 5 0 1 2 3 4 VGS (V) VDS (V) ID-Re(yfs) Temperature Characteristics (Typical) TC-RDS(ON) Characteristics (Typical) 6 7 8 9 10 VDS-Cpacitance Characteristics (Typical) (ID=2.5A) 10 5 ID (A) VGS=0V f=1MHz 1000 0.4 VDS=10V Ciss 500 40 °C Capacitance (pF) =– 4V C 5° 12 25°C 1 VGS=10V 0.2 RDS (ON) TC 0.3 (Ω) Re (yfs) (S) 5 Coss 100 50 0.1 Crss 0.5 0.3 0.05 0.1 0.5 5 1 0 –40 10 0 ID (A) 50 VSD-IDR Characteristics (Typical) 10 Safe Operating Area (SOA) (TC=25°C) s 0µ 10 ID (pulse) max 10 ED IT (O N ) ot sh (1 LI s M m S ) D R 10V ID (A) IDR (A) s 10 5 1m 8 1 4V 4 0.5 2 0 VGS=0V 0 0.5 1.0 VSD (V) 60 1.5 0.1 0.5 1 5 10 0 10 20 30 VDS (V) 20 6 150 100 TC (°C) 10 VDS (V) 50 100 40 50 SLA5022 Electrical characteristics (Source: PNP transistor) Specification min typ max Symbol ICBO IEBO Unit Conditions –10 µA VCB=–60V –5 mA VEB=–6V –1 VCEO –60 hFE 2000 V 5000 IC=–25mA 12000 VCE=–4V, IC=–4A VCE(sat) –1.5 V VBE(sat) –2.0 V VFEC (Ta=25°C) 2.0 IC=–4A, IB=–10mA V IFEC=4A trr 1.0 µs IF=±0.5A ton 1.0 µs VCC –25V, tstg 1.4 µs IC=–4A, tf 0.6 µs IB1=–IB2=–10mA fT 120 MHz VCE=–12V, IE=1A Cob 150 pF VCB=–10V, f=1MHz Characteristic curves (PNP) IC-VCE Characteristics (Typical) –12 hFE-IC Characteristics (Typical) 20000 IB=–10mA –5 mA –3mA 10000 –2mA 5000 –6 hFE hFE IC (A) typ 5000 –8 –1mA –4 (VCE=–4V) 20000 10000 –10 hFE-IC Temperature Characteristics (Typical) (VCE=–4V) =1 Ta 1000 1000 500 500 °C 25 °C 75 °C 25 –3 –0.5mA –2 0 0 –2 –4 –6 200 –0.1 –0.5 –1 VCE (V) –10 200 –0.1 C –0.5 VCE(sat)-IB Characteristics (Typical) (IC / IB=1000) –1 –5 –10 IC (A) IC (A) VCE(sat)-IC Temperature Characteristics (Typical) –3 –5 0° IC-VBE Temperature Characteristics (Typical) (VCE=–4V) –12 –3 –1 25°C 75°C –8 IC=–8A IC=–4A –1 –4 IC=–2A 125°C 0 –0.1 –2 –0.5 –1 –5 –10 0 –0.3 –0.5 –20 –1 –5 –10 –50 0 –100 –200 0 –1 IB (mA) IC (A) θ j-a-PW Characteristics 20 Safe Operating Area (SOA) –3 PT-Ta Characteristics 40 10 With Silicone Grease Natural Cooling All Circuits Operating 35 s 0µ –5 30 20 k sin at He PT (W) ite fin In –1 25 ith W IC (A) s 1m ms 10 10 5 –2 VBE (V) –20 –10 θch-c (°C / W) –6 T a= 125 °C 75° C 25°C –30 °C Ta=–30°C –2 IC (A) –2 VCE (sat) (V) VCE (sat) (V) –10 15 –0.5 10 1 0.5 1 Single Pulse Without Heatsink Ta=25°C 5 10 50 100 PW (mS) 500 1000 –0.1 –3 –5 Without Heatsink 5 –10 –50 VCE (V) –100 0 0 50 100 150 Ta (°C) 61