SavantIC Semiconductor Product Specification 2SD1505 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V 3 A IC Collector current ICM Collector current-peak 4.5 A IB Base current 0.5 A PC Collector power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1505 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=50µA ,IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=50µA ,IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 1.0 µA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 µA hFE DC current gain IC=0.5A ; VCE=3V COB Output capacitance IE=0 ; VCB=10V,f=1MHz 40 pF fT Transition frequency IC=0.5A ; VCE=5V 90 MHz 2 MIN TYP. 60 MAX UNIT 320 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SD1505