SAVANTIC 2SB891F

SavantIC Semiconductor
Product Specification
2SB891F
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1189F
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-40
V
VCEO
Collector-emitter voltage
Open base
-32
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-2
A
ICM
Collector current-Peak
-3
A
PC
Collector power dissipation
Ta=25
1.2
TC=25
5
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB891F
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;IB=0
-32
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50µA ;IE=0
-40
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50µA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-2.0A; IB=-0.2A
ICBO
Collector cut-off current
IEBO
hFE
VCEsat
fT
COB
CONDITIONS
MIN
TYP.
UNIT
-0.8
V
VCB=-20V; IE=0
-1.0
µA
Emitter cut-off current
VEB=-4V; IC=0
-1.0
µA
DC current gain
IC=-0.5A ; VCE=-3V
Transition frequency
IC=-0.5A ; VCE=-5V;f=30MHz
100
MHz
Collector output capacitance
IE=0; f=1MHz ; VCB=-10V
50
pF
hFE-2 Classifications
P
Q
R
82-180
120-270
180-390
2
-0.5
MAX
82
390
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB891F