SECOS 2SA733_11

2SA733
-60 V, -150mA
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Complementary of the 2SC945
Collector to base voltage: -60V
A
L
3
3
MARKING
C B
Top View
1
Product
Marking Code
2SA733
CS
1
K
2
E
2
D
F
CLASSIFICATION OF hFE
Product-Rank
2SA733-L
2SA733-H
Range
120~220
200~475
G
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SOT-23
3K
7’ inch
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
J
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Ratings
Unit
Collector to Base Voltage
Parameter
VCBO
-60
V
Collector to Emitter Voltage
VCEO
-50
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current - Continuous
IC
-150
mA
Collector Power Dissipation
PC
200
mW
TJ, TSTG
150, -55 ~ 150
°C
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
V(BR)CBO
-60
-
-
V
IC= -5µA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
-50
-
-
V
IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V
IE= -50µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA
VCB= -60V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA
VEB= -5V, IC=0
DC Current Gain
hFE
120
-
475
Collector to Emitter Saturation Voltage
VCE(sat)
-
-0.18
-0.3
V
IC= -100mA, IB= -10mA
Base to Emitter Saturation Voltage
VBE(on)
-0.58
-0.62
-0.68
V
VCE= -6V, IC= -1.0mA
fT
50
-
-
MHz
VCE= -6V, IC= -10mA
Cob
-
4.5
7
pF
VCB= -10V, IE=0, f=1MHz
dB
VCE= -6V, IC= -0.3mA, f=100Hz,
RG=10KΩ
Transition Frequency
Collector Output Capacitance
Noise Figure
http://www.SeCoSGmbH.com/
21-Jan-2011 Rev. D
NF
-
6
20
Test Conditions
VCE= -6V, IC= -1mA
Any changes of specification will not be informed individually.
Page 1 of 2
2SA733
Elektronische Bauelemente
-60 V, -150mA
PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
21-Jan-2011 Rev. D
Any changes of specification will not be informed individually.
Page 2 of 2