SCS21DSTL 0.2A , 200V Plastic-Encapsulated Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free WBFBP-03D DESCRIPTION Epitaxial planar Silicon diode D E L C FEATURES Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance D H B K A APPLICATIONS High Conductance Ultra Fast Diode For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) REF. A B C D E F MARKING G J Millimeter Min. Max. 0.950 1.050 0.950 1.050 0.010 0.070 0.210 0.310 0.350 REF. 0.680 REF. T3 F REF. G H J K L Millimeter Min. Max. 0.050 0.510 0.610 0.250 0.350 0.050 0.450 0.550 TOP VIEW PACKAGE INFORMATION Package MPQ Leader Size WBFBP-03D 5K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameters Symbol Rating Unit Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Forward Continuous Current IFM 400 mA Average Rectified Output Current IO 200 mA Non-Repetitive Peak Forward Surge Current t=1.0µs t=1.0s Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature http://www.SeCoSGmbH.com/ 21-Jul-2011 Rev. A 2.5 IFSM A 0.5 PD 100 mW RθJA 1250 °C / W TJ,TSTG 150, -65~150 °C Any changes of specification will not be informed individually. Page 1 of 2 SCS21DSTL 0.2A , 200V Plastic-Encapsulated Switching Diode Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Symbol Min. Max. Unit VF1 - 1 V IF=100mA VF2 - 1.25 V IF=200mA V(BR) 200 - V IR=100µA Capacitance between terminals CT - 5 pF VR=0, f=1MHz Maximum DC Reverse Current at rated DC blocking voltage IR - 0.1 µA VR=200V TRR - 50 nS IF=IR=30mA Forward Voltage Reverse breakdown voltage Maximum Reverse Recovery Time Test Conditions CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2