BC847AT /BC847BT /BC847CT NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-523 Base Emitter Collector A M MARKING 3 3 Product Marking Code BC847AT 1E BC847BT 1F BC847CT 1G C B Top View 1 1 2 L K 2 E D F G REF. A B C D E F PACKAGE INFORMATION Package MPQ LeaderSize SOT-523 3K 7’ inch Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 H J REF. G H J K L M Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise noted ) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 6 V IC 0.1 A PC 150 mW TJ, TSTG 150, -55 ~ 150 ℃ Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 3 BC847AT /BC847BT /BC847CT NPN Plastic Encapsulate Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified ) Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage VCBO 50 - - V IC = 10 μA, IE = 0 Collector to Emitter Breakdown Voltage VCEO 45 - - V IC = 10 mA, IB = 0 Emitter to Base Breakdown Voltage VEBO 6 - - V IE = 1 μA, IC = 0 Collector Cutoff Current ICBO nA VCB = 30 V Parameter Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Saturation Voltage VBE(sat) Base to Emitter Voltage VBE(on) BC847BT Collector Output Capacitance Noise Figure http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A BC847BT BC847CT 15 0.25 - - 0.6 - 0.7 - - 0.9 - 580 660 700 V V mV - - 770 - 220 200 - 450 420 - 800 fT 100 - - MHz COb - - 4.5 pF - - 10 - - 4 hFE BC847CT Transition Frequency - 110 BC847AT DC Current Gain - NF Test Conditions IC = 10mA, IB = 0.5 mA IC = 100mA, IB = 5 mA IC = 10mA, IB = 0.5 mA IC = 100mA, IB = 5 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 2 mA dB VCE = 5 V, IC = 10 mA f = 100MHz VCB = 10 V, f=1MHz VCE= 5V, BW= 200HZ, f= 1KHz, RS= 2 kΩ Any changes of specification will not be informed individually. Page 2 of 3 BC847AT /BC847BT /BC847CT Elektronische Bauelemente NPN Plastic Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 3