MMBT619 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Low saturation voltage A L 3 MARKING 3 C B Top View 619 1 1 K 2 E 2 PACKAGE INFORMATION D Package MPQ Leader Size SOT-23 3K 7 inch F H G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. A B C D E F REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 2 A Collector Power Dissipation PC 350 mW RθJA 357 °C / W PCM 625 mW RθJA 200 °C / W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction To Ambient Maximum Power Dissipation 1 Thermal Resistance From Junction To Ambient Junction, Storage Temperature 1 Note: 1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm. http://www.SeCoSGmbH.com/ 20-Feb-2012 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 MMBT619 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Min. Typ. Max. Unit V(BR)CBO 50 - - V IC=100µA, IE=0 V(BR)CEO 50 - - V IC=10mA, IB=0 V(BR)EBO 5 - - V IE=100µA, IC=0 Collector Cut-Off Current ICBO - - 100 nA VCB=40V, IE=0 Emitter Cut-Off Current IEBO - - 100 nA VEB=4V, IC=0 200 - - VCE=2V, IC=10mA 300 - - VCE=2V, IC=200mA 200 - - VCE=2V, IC=1A 100 - - VCE=2V, IC=2A - 40 - VCE=2V, IC=6A - - 20 - - 200 - - 220 VBE(sat) - - 1 V IC=2A, IB=50mA VBE(on) - - 1 V IC=2A, VCE=2V Collector output capacitance Cob - - 20 pF VCB=10V, f=1MHz Turn-On Time t(on) - 170 - ns Turn-Off Time t(off) - 750 - ns fT 100 - - MHz Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage 1 Emitter to Base Breakdown Voltage DC Current Gain 2 hFE Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base to Emitter On Voltage 1 1 1 VCE(sat) Test Conditions IC=100mA, IB=10mA mV IC=1A, IB=10mA IC=2A, IB=50mA VCC=10V, IC=1A, IB1= -IB2=10mA Transition Frequency VCE=10V, IC=50mA, f=100MHz Note: 1. Pulse width≦300µs, duty cycle≦2.0% http://www.SeCoSGmbH.com/ 20-Feb-2012 Rev. A Any changes of specification will not be informed individually. Page 2 of 2