SECOS MMBT619

MMBT619
2A , 50V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
Low saturation voltage
A
L
3
MARKING
3
C B
Top View
619
1
1
K
2
E
2
PACKAGE INFORMATION
D
Package
MPQ
Leader Size
SOT-23
3K
7 inch
F
H
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5
V
Collector Current - Continuous
IC
2
A
Collector Power Dissipation
PC
350
mW
RθJA
357
°C / W
PCM
625
mW
RθJA
200
°C / W
TJ, TSTG
150, -55~150
°C
Thermal Resistance From Junction To Ambient
Maximum Power Dissipation
1
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
1
Note:
1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm.
http://www.SeCoSGmbH.com/
20-Feb-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
MMBT619
2A , 50V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
50
-
-
V
IC=100µA, IE=0
V(BR)CEO
50
-
-
V
IC=10mA, IB=0
V(BR)EBO
5
-
-
V
IE=100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
100
nA
VCB=40V, IE=0
Emitter Cut-Off Current
IEBO
-
-
100
nA
VEB=4V, IC=0
200
-
-
VCE=2V, IC=10mA
300
-
-
VCE=2V, IC=200mA
200
-
-
VCE=2V, IC=1A
100
-
-
VCE=2V, IC=2A
-
40
-
VCE=2V, IC=6A
-
-
20
-
-
200
-
-
220
VBE(sat)
-
-
1
V
IC=2A, IB=50mA
VBE(on)
-
-
1
V
IC=2A, VCE=2V
Collector output capacitance
Cob
-
-
20
pF
VCB=10V, f=1MHz
Turn-On Time
t(on)
-
170
-
ns
Turn-Off Time
t(off)
-
750
-
ns
fT
100
-
-
MHz
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
1
Emitter to Base Breakdown Voltage
DC Current Gain
2
hFE
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter On Voltage
1
1
1
VCE(sat)
Test Conditions
IC=100mA, IB=10mA
mV
IC=1A, IB=10mA
IC=2A, IB=50mA
VCC=10V, IC=1A, IB1= -IB2=10mA
Transition Frequency
VCE=10V, IC=50mA, f=100MHz
Note:
1. Pulse width≦300µs, duty cycle≦2.0%
http://www.SeCoSGmbH.com/
20-Feb-2012 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2