SECOS SCS202NF_09

SCS202NF
80 V, 300 mA
Plastic-Encapsulated, Dual Series Chips
Small Signal Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Ultra high speed switching
High reliability
Suitable for high packaging density layout
Fast reverse recovery time : trr = 1.5ns (typ.)
Construction: silicon epitaxial planar
z
z
z
z
z
SOT-323
A
L
3
3
C B
Top View
1
1
K
PACKAGING INFORMATION
Four types of packaging are available
Weight: 0.0078 g (Approx.)
z
z
2
E
D
F
G
A
B
C
D
E
MARKING CODE
,
A3
H
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
REF.
N
2
J
REF.
F
G
H
J
Millimeter
Min.
Max.
0.20
0.40
0.525 REF.
0.08
0.15
ABSOLUTE MAXIMUM RATINGS (each diode)
Parameter
Symbol
Ratings
Unit
Peak Reverse Voltage
VRM
80
V
DC Reverse Voltage
VR
80
V
Maximum (Peak) Forward Current
IFM
300
mA
Average Forward Current
IO
100
mA
Surge Current 1μS
Total Power Dissipation
Junction, Storage Temperature
ISURGE
4
A
PD
200
mW
TJ, TSTG
+150, -55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)(each diode)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward Voltage
VF
-
-
1.2
V
IF = 100 mA
Reverse Voltage Leakage Current
IR
-
-
0.1
μA
VR = 70V
Diode Capacitance
CT
-
-
3.5
pF
VR = 6 V, f = 1 MHz
Reverse Recovery Time
TRR
-
-
4.0
nS
VR = 6 V, IF = 5 mA
Notes: 1. FR–5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
01-April-2009 Rev. B
Page 1 of 2
SCS202NF
80 V, 300 mA
Plastic-Encapsulated, Dual Series Chips
Small Signal Switching Diode
Elektronische Bauelemente
CHARACTERISTIC CURVES
10
125
REVERSE RECOVERY TIME : trr (ns)
100
75
50
25
0
0
25
50
75
100
125
9
VR=6V
8
7
6
5
4
3
2
1
0
0
150
1
2
AMBIENT TEMPERATURE :Ta (ºC)
50
Ta=100°C
REVERSE CURRENT : IR (nA)
FORWARD CURRENT : IF (mA)
1000
10
5
Ta=85ºC
50ºC
25ºC
2
1
0ºC
30ºC
0.5
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE : VF
75°C
100
50°C
10
25°C
1
0°C
25°C
0.1
0.01
0
1.6
1.4
4
5
6
7
8
9
10
(mA)
Fig.2 Reverse recovery time
Fig.1 Power attenuation curve
20
3
FORWARD CURRENT : IF
10
(V)
20
30
40
50
60
70
80
CAPACITANCE BETWEEN TERMINALS : CT (pF)
POWER DISSIPATION : Pd / Pd Max.(%)
SCS202NF
Fig.4 Reverse characteristics
0.01μF
0
0
2
4
6
8
10 12 14 16 18 20
Fig.5 Capacitance between
terminals characteristics
D.U.T.
5
PULSE GENERATOR
OUTPUT 50
2
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.3 Forward characteristics
f=1MHz
4
50
SAMPLING
OSCILLOSCOPE
INPUT
100ns
OUTPUT
trr
0.1IR
IR
0
Fig.6 Reverse recovery time (trr) measurement circuit
01-April-2009 Rev. B
Page 2 of 2