SECOS MMBD4448TC

MMBD4448T Series
Plastic-Encapsulated Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
z
z
z
SOT-523
Fast switching speed
For general purpose switching applications
High conductance
A
L
3
3
C B
Top View
1
1
K
2
E
2
MARKING
Part
Name
D
MMBD4448T
MMBD4448TA
MMBD4448TC
MMBD4448TS
A3
A6
A7
A8
Marking
F
REF.
A
B
C
D
E
F
Circuit
H
G
Millimeter
Min.
Max.
1.50
1.70
1.45
1.75
0.75
0.85
0.70
0.90
0.90
1.10
0.25
0.33
J
Millimeter
Min.
Max.
0.00
0.15
0.28
0.40
0.10
0.20
0.75
0.85
REF.
G
H
J
K
L
ABSOLUTE MAXIMUM RATINGS (Single Diode @ Ta = 25°C)
Parameter
Non-Repetitive Peak Reverse Voltage
Symbol
Value
Unit
VRM
100
V
80
V
57
V
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
Power Dissipation
4.0
IFSM
A
1.5
PD
150
mW
Thermal Resistance Junction to Ambient
RθJA
833
℃/W
Storage Temperature
TSTG
-65 ~ 150
℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Forward Voltage (Note 2)
Symbol
Min.
Max.
Unit
VR
VF1
VF2
VF3
VF4
80
0.62
-
0.720
0.855
1.00
1.25
V
V
V
V
V
IR = 2.5 µA
IF = 5.0 mA
IF = 10 mA
IF = 100 mA
IF = 150 mA
Test Conditions
-
0.10
µA
VR = 70 V
VR = 20 V
Peak Reverse Current (Note 2)
IR
-
25
nA
Total Capacitance
CT
-
3.50
pF
VR = 6 V, f = 1.0 MHz
Reverse Recovery Time
tRR
-
4.00
nS
VR = 6 V, IF = 5.0 mA
01-Jun-2008 Rev. A
Page 1 of 2
MMBD4448T Series
Elektronische Bauelemente
Plastic-Encapsulated Switching Diode
RATINGS AND CHARACTERISTIC CURVES (MMBD4448T)
01-Jun-2008 Rev. A
Page 2 of 2