MMBD4448T Series Plastic-Encapsulated Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION z z z SOT-523 Fast switching speed For general purpose switching applications High conductance A L 3 3 C B Top View 1 1 K 2 E 2 MARKING Part Name D MMBD4448T MMBD4448TA MMBD4448TC MMBD4448TS A3 A6 A7 A8 Marking F REF. A B C D E F Circuit H G Millimeter Min. Max. 1.50 1.70 1.45 1.75 0.75 0.85 0.70 0.90 0.90 1.10 0.25 0.33 J Millimeter Min. Max. 0.00 0.15 0.28 0.40 0.10 0.20 0.75 0.85 REF. G H J K L ABSOLUTE MAXIMUM RATINGS (Single Diode @ Ta = 25°C) Parameter Non-Repetitive Peak Reverse Voltage Symbol Value Unit VRM 100 V 80 V 57 V Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0µs @ t = 1.0s Power Dissipation 4.0 IFSM A 1.5 PD 150 mW Thermal Resistance Junction to Ambient RθJA 833 ℃/W Storage Temperature TSTG -65 ~ 150 ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Parameters Reverse Breakdown Voltage Forward Voltage (Note 2) Symbol Min. Max. Unit VR VF1 VF2 VF3 VF4 80 0.62 - 0.720 0.855 1.00 1.25 V V V V V IR = 2.5 µA IF = 5.0 mA IF = 10 mA IF = 100 mA IF = 150 mA Test Conditions - 0.10 µA VR = 70 V VR = 20 V Peak Reverse Current (Note 2) IR - 25 nA Total Capacitance CT - 3.50 pF VR = 6 V, f = 1.0 MHz Reverse Recovery Time tRR - 4.00 nS VR = 6 V, IF = 5.0 mA 01-Jun-2008 Rev. A Page 1 of 2 MMBD4448T Series Elektronische Bauelemente Plastic-Encapsulated Switching Diode RATINGS AND CHARACTERISTIC CURVES (MMBD4448T) 01-Jun-2008 Rev. A Page 2 of 2