SEME-LAB SMP400G-BB

SMP400G-BB
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
FEATURES
Ø 5.4
13 nom.
3.6
Ø 4.7
Ø 0.45
Lead
Anode
DESCRIPTION
The SMP400G-BB is a Silicon P.I.N. photodiode
incorporated in a compact, hermetic metal can package.
The package window has greater ultra-violet light
transmission, thus extending the useful spectral range of
the device. The electrical terminations are via two leads of
diameter 0.005" on a pitch of 0.1". The cathode of the
photodiode is electrically connected to the package.
TO-18 Package
Pin 1 – Anode
EXCELLENT LINEARITY
LOW NOISE
WIDEST SPECTRAL RESPONSE
WIDE INTRINSIC BANDWIDTH
ENHANCED UV SENSITIVITY
LOW LEAKAGE CURRENT
LOW CAPACITANCE
INTEGRAL OPTICAL FILTER OPTION note 1
TO18 HERMETIC METAL CAN PACKAGE
EMI SCREENING MESH AVAILABLE
Note 1 Contact Semelab Plc for filter options
2.54
Cathode
and case
•
•
•
•
•
•
•
•
•
•
Pin 2 – Cathode & Case
The photodiode structure has been optimised for high
sensitivity, high speed light measurement applications
across the infra-red to ultra-violet spectrum. Inclusion of a
suitable optical filter into the package can produce a device
that responds only to ultra-violet light. The metal can and
optional screening mesh ensure a rugged device with a
high degree of immunity to radiated electrical interference.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
Prelim. 1/98
SMP400G-BB
CHARACTERISTICS (Tamb=25°C unless otherwise stated)
Characteristic
Test Conditions.
λ at 900nm
Responsively
Min.
Typ.
0.45
0.55
A/W
0.62
mm2
Active Area
Dark Current
Breakdown Voltage
Capacitance
E = 0 Dark
1V Reverse
0.1
1.0
E = 0 Dark
10V Reverse
0.5
2.5
E = 0 Dark
10µA Reverse
E = 0 Dark
0V Reverse
8
12
E = 0 Dark
20V Reverse
1.5
2.5
60
pF
ns
7.2
900nm
NEP
V
4
50Ω
Units
nA
80
30V Reverse
Rise Time
Max.
0.45
W/√Hz
Directional characteristics
Directional Characteristics
80°
1
1
Angle from sensor
to illumination
70°
0.9
60°
0.8
0.8
Normalised Incident Power
50°
40°
0.6
30°
0.4
20°
0.7
0.6
0.5
0.4
0.3
0.2
0.2
10°
0.1
0
0
0
0.2
0.4
0.6
0.8
0
1
10
20
30
40
50
60
70
80
90
Angle from sensor to illumination
Normalised incident power
Spectral Response
Relative Responsivity (%)
100
80
60
40
20
0
0
Semelab plc.
200
400
600
Wavelength (nm)
800
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1000
1200
Prelim. 1/98