SMP600G-FJ MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES 3.8 ± 0.2 WINDOW Ø 5.9 ± 0.1 Ø 9.1 ± 0.2 Ø 8.1 ± 0.1 20 SENSITIVE SURFACE Ø 0.45 LEAD HIGH SENSITIVITY PHOTODIODE ISOLATED FROM PACKAGE EXCELLENT LINEARITY LOW NOISE · WIDE SPECTRAL RESPONSE INTEGRAL OPTICAL FILTER OPTION note 1 TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE Note 1 Contact Semelab Plc for filter options 5.08 ± 0.2 DESCRIPTION 3 2 The SMP600G-FJ is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The can structure permits a wide range of optical filter options. The photodiode is electrically isolated from the package, which has a separate earth lead. 1 TO-39 Package Pin 1 – Anode • • • • • • • • Pin 2 – Cathode Pin 3 – Case The larger photodiode active area provides greater sensitivity than the SMP550 range of devices, with a slight reduction in speed. Inherent in the device geometry is a reduction in the receiving angle. The photodiode structure has been optimised for high sensitivity, light measurement applications. The metal can, isolated photodiode and optional screening mesh ensure a rugged device with a high degree of immunity to conducted and radiated electrical interference. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V Prelim. 1/98 SMP600G-FJ CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions. λ at 900nm Responsively Min. Typ. 0.45 0.55 A/W 15 mm2 Active Area Dark Current Breakdown Voltage Capacitance 2 E = 0 Dark 1V Reverse E = 0 Dark 10V Reverse E = 0 Dark 10µA Reverse E = 0 Dark 0V Reverse 90 E = 0 Dark 20V Reverse 25 60 V pF ns 20x10-14 900nm Units nA 12 50Ω NEP 6 80 30V Reverse Rise Time Max. 0.45 W/√Hz Directional characteristics Directional Characteristics 80° 1 1 Angle from sensor to illumination 70° 0.9 60° 0.8 0.8 Normalised Incident Power 50° 40° 0.6 30° 0.4 20° 0.7 0.6 0.5 0.4 0.3 0.2 0.2 10° 0.1 0 0 0 0.2 0.4 0.6 0.8 0 1 10 20 30 40 50 60 70 80 90 Angle from sensor to illumination Normalised incident power Spectral Response Relative Responsivity (%) 100 80 60 40 20 0 0 Semelab plc. 200 400 600 Wavelength (nm) 800 Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 1000 1200 Prelim. 1/98