SMP690G-KQS MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES Ø 14.0 38 nom. 5.5 Ø 12.0 Ø 0.45 LEAD 8.0 • • • • • • • • • HIGH SENSITIVITY WIDEST SPECTRAL RESPONSE ENHANCED UV SENSITIVITY PHOTODIODE ISOLATED FROM PACKAGE EXCELLENT LINEARITY LOW NOISE INTEGRAL OPTICAL FILTER OPTION note 1 TO8 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE Note 1 Contact Semelab Plc for filter options DESCRIPTION 3 The SMP690G-KQS is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The package window has greater ultra-violet light transmission, thus extending the useful spectral range of the device. The electrical terminations are via two leads of diameter 0.018" on pitch centre diameter of 0.2". The photodiode is electrically isolated from the package, which has a separate earth lead. 1 2 TO8 Small Pin 1 – Anode Pin 2 – Cathode Pin 3 –Case The larger photodiode active area provides greater sensitivity than the SMP600 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications across the infra-red to ultra-violet spectrum. Inclusion of a suitable optical filter into the package can produce a device that responds only to ultra-violet light. The metal can, isolated photodiode and optional screening mesh ensure a rugged device with a high degree of immunity to conducted and radiated electrical interference. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V Prelim. 1/98 SMP690G-KQS CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions. λ at 900nm Responsively Min. Typ. 0.45 0.55 A/W 15 mm2 Active Area Dark Current Breakdown Voltage Capacitance 2 E = 0 Dark 1V Reverse E = 0 Dark 10V Reverse E = 0 Dark 10µA Reverse E = 0 Dark 0V Reverse 90 E = 0 Dark 20V Reverse 25 60 V pF ns 20x10-14 900nm Units nA 12 50Ω NEP 6 80 30V Reverse Rise Time Max. 0.45 W/√Hz Directional characteristics Directional Characteristics 80° 1 1 Angle from sensor to illumination 70° 0.9 60° 0.8 Normalised Incident Power Normalised incident power 0.8 50° 40° 0.6 30° 0.4 20° 0.2 10° 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0 0.2 0.4 0.6 0.8 0 1 10 20 30 40 50 60 70 80 90 Angle from se nsor to illumination Normalised incident power Spectral Response Relative Responsivity (%) 100 80 60 40 20 0 0 Semelab plc. 200 400 600 800 Wave le ngth (nm) Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 1000 1200 Prelim. 1/98