1SS5004WS SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Diode PINNING DESCRIPTION PIN Features • Fast switching speed • High conductance • High reverse breakdown voltage rating 1 Cathode 2 Anode 2 1 YM Top View Marking Code: "YM" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 400 V Reverse Voltage VR 350 V Continuous Forward Current IF 225 mA Repetitive Peak Forward Current IFRM 625 mA Non-Repetitive Peak Forward Surge Current (1 ms) IFSM 2 A Power Dissipation Pd 350 mW Junction Temperature Tj 150 O Storage Temperature Range Ts - 65 to + 150 O Repetitive Peak Reverse Voltage C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 20 mA at IF = 100 mA at IF = 200 mA VF - 0.87 1 1.25 V Reverse Current at VR = 240 V IR - 100 nA V(BR)R 400 - V Total Capacitance at VR = 0 , f = 1 MHz CT - 5 pF Reverse Recovery Time at IF = IR = 30 mA , irr = 3 mA, RL = 100 Ω trr - 100 ns Reverse Breakdown Voltage at IR = 150 µA SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/03/2008 1SS5004WS SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/03/2008 1SS5004WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/03/2008