SDS160EWT SILICON EPITAXIAL PLANAR SWITCHING DIODE for ultra high speed switching application PINNING DESCRIPTION PIN Features • Fast reverse recovery time • Small total capacitance • Low forward voltage 1 Cathode 2 Anode 2 1 A Top View Marking Code: "A" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current IO 100 mA Peak Forward Current IFM 300 mA Surge Current (10 ms) IFSM 2 A Power Dissipation PD 150 mW Junction Temperature TJ 150 O Storage Temperature Tstg - 55 to + 150 O Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 80 V IR 0.5 µA Total Capacitance at VR = 0 V, f = 1 MHz CT 3 pF Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω trr 4 ns C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 SDS160EWT SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 SDS160EWT PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND C A ∠ HE D bp E A UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.127 1.25 1.15 0.85 0.75 1.7 1.5 0.1 ∠ 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009